IRFL014NTRPBF vs IRFR120NTRPBF Comparison
Detailed side-by-side comparison of IRFL014NTRPBF by Infineon and IRFR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF β Active
Specification Comparison
| Parameter | IRFL014NTRPBF | IRFR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $0.26 |
| FET Type | N-Channel MOSFET, Metal Oxide | β |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at 25 C | 1.9 A | β |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 160 milliohm | β |
| Gate Charge (Qg) typical | 7 nC | β |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | β |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | β |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Package | SOT-223 (TO-261-4), 4-pin (3 + tab) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| dv/dt Rating | Yes (dynamic dv/dt rated) | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| MSL Level | Level 1 (per JEDEC J-STD-020) | β |
| Technology | HEXFET (planar N-channel, fifth generation) | HEXFET (IR MOSFET fifth generation) |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | β | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | β | 16.7 nC |
| Gate-to-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Operating Junction Temperature Range | β | -55C to +175C |
| Channel Type | β | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | β | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | β | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | β | Lead-Free, RoHS Compliant |