IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon
MPN: IRFR120NTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.42 | $42.00 |
| 500 | $0.35 | $175.00 |
| 1,000 | $0.3 | $300.00 |
| 3,000 | $0.26 | $780.00 |
Drop-in alternatives for IRFR120NTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR120NTRLPBF
✅ Drop-In✓ In Stock
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View Datasheet →IRFR1205TRPBF
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View Datasheet →IRFR5410TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IRFR5305TRPBF
✅ Drop-In✓ In Stock
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✅ Drop-In✓ In Stock
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View Datasheet →IRFR120NTRPBF Maximum Ratings & Electrical Characteristics
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A |
| Maximum Power Dissipation (PD) at TC=25C | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | 16.7 nC |
| Operating Junction Temperature Range | -55C to +175C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Channel Type | N-Channel Enhancement Mode |
| Technology | HEXFET (IR MOSFET fifth generation) |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant |
IRFR120NTRPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10V VGS for full enhancement |
| Pin 2 | Drain — Power drain; internally connected to the metal tab on the back of the package |
| Pin 3 | Source — Source terminal; connect to circuit ground for low-side switching |
| Pin TAB | Drain (Tab) — Metal back-tab electrically and thermally connected to Drain; solder to PCB copper pad for heatsinking |
Safe Operating Area (DC)
Typical Applications
IRFR120NTRPBF is suitable for 6 applications: 24 V Industrial DC-DC Synchronous Rectifier, Brushed DC Motor Driver Low-Side Switch, Solar Charge Controller Load Switch, LED Lighting Power Stage, Battery Protection Circuit Disconnect, Telecom 48 V Hot-Swap Controller.
24 V Industrial DC-DC Synchronous Rectifier
The IRFR120NTRPBF fits 24 V industrial bus synchronous-rectifier stages because its 100 V VDS gives 4x safety margin above a 24 V nominal rail while sustaining unclamped inductive transients from the transformer leakage inductance. Its 210 milliohm RDS(on) at VGS=10V keeps conduction loss near 1 W at 5 A output, and the 16.7 nC total gate charge allows switching frequencies up to 200 kHz without excessive driver loss. Placed on the low-side of the synchronous-rectifier leg with a Schottky parallel anti-parallel diode, it outperforms older IRF120 generations on efficiency. The DPAK footprint allows direct PCB drop-in upgrade of legacy TO-220 designs if thermal copper is adequate.
Recommended
Brushed DC Motor Driver Low-Side Switch
The IRFR120NTRPBF handles brushed DC motor low-side switching in 12-24 V motion-control systems because its 9.4 A continuous drain current covers most fractional-horsepower motor ratings and the 100 V breakdown absorbs L*di/dt kickback when the motor inductance commutates. Driven from a 10 V gate via a discrete driver or H-bridge controller, the device's 210 milliohm RDS(on) dissipates under 2 W at 3 A motor current, eliminating the need for a TO-220 heatsink. The ruggedized HEXFET die is avalanche-rated, which is essential for absorbing motor back-EMF. The DPAK surface-mount package also reduces assembly cost versus TO-220 in high-volume OEM production.
Recommended
Solar Charge Controller Load Switch
The IRFR120NTRPBF is suitable for solar charge controller low-side load switches in off-grid photovoltaic systems because its 100 V VDS tolerates 24 V battery bus transients and its low RDS(on) minimizes conduction loss during PWM dimming of the load. The fifth-generation HEXFET die achieves the low RDS(on) per silicon area that improves overall charge-cycle efficiency by 1-2% versus older IRF120 generations, which directly extends battery runtime. The -55C to +175C junction temperature range supports outdoor enclosure operation. With proper gate-source pull-down resistor (10 kohm) to prevent accidental turn-on, the part provides reliable long-term switching in unattended solar installations.
Recommended
LED Lighting Power Stage
The IRFR120NTRPBF serves as the main switching element in 24 V constant-current LED driver stages because its 100 V VDS and 9.4 A rating comfortably handle boost-converter switch operation at 24 V input with up to 5 A peak inductor current for high-brightness LED arrays. The fast switching speed of the fifth-generation HEXFET allows PWM dimming frequencies up to 20 kHz without audible noise from the inductor, while the 210 milliohm RDS(on) keeps conduction loss manageable in high-current strings. The DPAK footprint with copper-pour heatsinking eliminates the need for a discrete heatsink in most architectural lighting fixtures. The lead-free RoHS-compliant finish meets modern lighting OEM environmental requirements.
Recommended
Battery Protection Circuit Disconnect
The IRFR120NTRPBF is appropriate for 12-24 V battery pack protection circuits where it acts as the low-side disconnect switch during over-current, under-voltage, or over-temperature events. Its 9.4 A continuous rating covers most e-mobility and power-tool battery packs, and the 100 V VDS gives headroom for 24 V Li-ion packs charged up to 29.4 V. The avalanche-rated die absorbs the inductor kickback from relay coils and motor windings during disconnect events. With proper gate-drive protection and a TVS diode across drain-source, the part provides a robust safety disconnect. The DPAK surface-mount package simplifies automated battery-pack assembly versus TO-220 through-hole parts.
Recommended
Telecom 48 V Hot-Swap Controller
The IRFR120NTRPBF works as the main pass-element in 48 V telecom hot-swap controllers where its 100 V VDS gives 2x safety margin above the 48 V nominal bus while sustaining inrush currents during board insertion. The 9.4 A continuous rating covers most PICMG and ATCA card current limits, and the 210 milliohm RDS(on) keeps steady-state conduction loss manageable. The fifth-generation HEXFET cell structure provides the rugged SOA needed to absorb transient short-circuit events during the hot-swap controller's current-limit loop. The DPAK footprint with adequate copper-pour heatsinking allows compact OR-ing and hot-swap designs on the telecom backplane.
Recommended
Recommended Products Summary
Engineering reference data for IRFR120NTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR120NTRLPBF | IRFR1205TRPBF | IRFR5410TRPBF | IRFR5305TRPBF | IRFL014NTRPBF |
|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V (identical) | 55 V (-45%) | 100 V (identical) | -55 V (P-channel) | 55 V (-45%) |
| Continuous Drain Current (ID at TC=25C) | 9.4 A | 9.4 A (identical) | 5.6 A (-40%) | 13 A (+38%) | -10 A (P-channel) | 2.6 A (-72%) |
| On-Resistance (RDS(on)) at VGS=10V | 210 milliohms | 210 milliohms (identical) | 110 milliohms (-48%) | 205 milliohms (identical) | 140 milliohms (P-channel) | 160 milliohms (-24%) |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC (identical) | 9.6 nC (-43%) | 26 nC (+56%) | 32 nC (P-channel) | 11 nC (-34%) |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel |
| Technology | HEXFET Gen 5 | HEXFET Gen 5 | HEXFET Gen 5 | HEXFET Gen 5 | HEXFET Gen 5 | HEXFET Gen 3 |
| Unit Price (qty 1, USD as of 2026-09-13) | 0.62 | 0.62 (identical) | 0.55 (lower) | 0.85 (higher) | 0.75 (higher) | 0.48 (lower) |
Key Differentiators
- Identical die performance with reversed pin-1 orientation flexibility (vs IRFR120NTRLPBF)
- Higher voltage headroom than 55V-class DPAK alternatives (vs IRFR1205TRPBF)
- Lower gate charge than higher-current same-package alternatives (vs IRFR5410TRPBF)
Design Notes
Estimated: at continuous ID=9.4A and RDS(on)=210 milliohm, the steady-state conduction loss is roughly 9.4^2 x 0.21 = 18.5 W, which exceeds the 48 W PD rating only at full TC=25C. In practice at TA=70C ambient with 1 square inch of DPAK copper-pour heatsinking, the effective RthJA rises to ~50 C/W, so the junction temperature delta is 18.5 W x 50 C/W = 925 C above ambient - clearly above the 175C max. The practical continuous load is therefore 3-5A maximum without a discrete heatsink. Add a TO-220 clip-on heatsink or 4 square inches of 2 oz copper pour to sustain >7A continuous operation. The Infineon IR MOSFET datasheet thermal-resistance table should be the primary reference for layout-specific RthJA.
The TO-252AA DPAK metal tab is electrically connected to the Drain pin and MUST be soldered to a copper pad on the PCB for both electrical connection and thermal dissipation. Per the JEDEC TO-252 package outline, the minimum recommended pad layout is 6.5 mm x 5.5 mm with thermal vias (0.3 mm diameter, 1.0 mm pitch) connecting to an internal copper plane. Use 2 oz copper on the outer layer for highest thermal performance. The gate and source pads should be routed with short, wide traces to minimize parasitic inductance that can cause gate ringing at high dv/dt.
Do not drive the gate directly from a 3.3V or 5V microcontroller GPIO without a gate-driver stage - the IRFR120NTRPBF needs VGS=10V to fully enhance and reach its 210 milliohm RDS(on); at VGS=4.5V the RDS(on) rises above 500 milliohm, increasing conduction loss by 2.5x. Add a 10 kohm pull-down resistor from gate to source to prevent accidental turn-on during MCU reset. In bridge-topology applications, use a bootstrap gate driver such as IR2110 or IRS2005 to provide the floating high-side supply. Always check that the gate-driver supply voltage is at least 10V under load (not just nominally 12V) since driver-IC dropout can otherwise leave the MOSFET in its linear region.
For switching applications above 50 kHz, place a local 100 nF ceramic bypass capacitor (X7R, 25V or higher) directly between the gate-driver VCC pin and ground, within 5 mm of the driver IC. Add a 10-100 ohm gate-series resistor to dampen parasitic ringing between the driver output, gate-source capacitance, and the source-lead inductance. Keep the high-current drain-source loop area minimal (use the top copper layer for the drain trace and an adjacent ground pour for the source return) to reduce EMI. Per the Infineon application note on DPAK layout, the source pin should have a direct, low-inductance connection to the power-ground plane rather than a long trace.
Compliance Information
RoHS and REACH compliance per Infineon product page declaration. Lead-free terminal finish with matte-tin plating per JESD97. Halogen-free status not explicitly confirmed in the verified web data - recommend confirming with Infineon customer support. Not AEC-Q100 qualified; this is an industrial/consumer-grade part. For automotive AEC-Q100 qualified 100V DPAK MOSFETs, see Infineon's IRFR120N-301PBF or onsemi NVD5867NLT4G alternatives.
