IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
MPN: IRFL014NTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.55 | $55.00 |
| 500 | $0.42 | $210.00 |
| 1,000 | $0.36 | $360.00 |
| 2,500 | $0.3 | $750.00 |
Drop-in alternatives for IRFL014NTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRFL014NTRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at 25 C | 1.9 A |
| Gate-to-Source Voltage (VGS) max | Β±20 V |
| RDS(on) max at VGS=10V | 160 milliohm |
| Gate Charge (Qg) typical | 7 nC |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Mounting Type | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) |
| dv/dt Rating | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | Yes / Compliant |
| MSL Level | Level 1 (per JEDEC J-STD-020) |
| Technology | HEXFET (planar N-channel, fifth generation) |
IRFL014NTRPBF Pin Configuration
| Pin 1 | Gate β MOSFET gate control input; drive to 10V for full enhancement |
| Pin 2 | Drain β MOSFET drain; internally connected to the metal tab (pin 4) |
| Pin 3 | Source β MOSFET source; reference for gate drive voltage |
| Pin 4 | Drain (Tab) β Metal tab electrically connected to drain; thermal pad for heatsinking |
Safe Operating Area (DC, TJ = 25 C)
Typical Applications
IRFL014NTRPBF is suitable for 6 applications: DC-DC Converter Synchronous Rectifier, Load Switch in Battery-Powered Portable Devices, Solenoid and Relay Driver (Low-Side Switch), Small DC Motor PWM Speed Control, Power ORing in Redundant Supply Architectures, LED Driver Low-Side Switch for Strip Lighting.
DC-DC Converter Synchronous Rectifier
The IRFL014NTRPBF is well-suited as a low-side synchronous rectifier in non-isolated buck converters up to 30 V input and 1.5 A load current. Its 160 milliohm RDS(on) at VGS = 10 V keeps conduction loss below 250 mW at full load (I^2 * R = 1.5^2 * 0.16 = 360 mW worst-case), and the 7 nC total gate charge enables switching frequencies up to 500 kHz without excessive gate-drive loss. Compared to using a Schottky diode, the synchronous MOSFET approach improves efficiency by 3-5% at full load and reduces thermal dissipation, allowing smaller PCB area. The SOT-223 tab should be soldered to a copper pour of at least 50 mm squared to maintain junction temperature within the 150 C limit.
Recommended
Load Switch in Battery-Powered Portable Devices
In battery-powered portable equipment such as handheld instruments, wearables, and IoT sensor nodes, the IRFL014NTRPBF serves as a low-side load switch disconnecting subsystems during sleep mode to extend battery life. The 1.9 A continuous current handles power-hungry peripherals such as radio modules, sensors, or backlight drivers, while the low 160 milliohm RDS(on) introduces minimal voltage drop (153 mV at 1 A). The 7 nC gate charge means a microcontroller GPIO can drive the gate via a 1 kohm pull-up and 10 kohm pull-down without significant dynamic loss. Designers should note that full enhancement requires VGS of 10 V; for direct 3.3 V GPIO drive, substitute with the logic-level IRLL014NTRPBF instead.
Recommended
Solenoid and Relay Driver (Low-Side Switch)
The IRFL014NTRPBF's full avalanche rating and dynamic dv/dt ruggedness make it a strong candidate for driving small inductive loads such as 5 V or 12 V relays, solenoid valves, and small DC motors in automotive, industrial, and appliance applications. The 55 V VDS rating provides ample headroom for back-EMF transients (typically 3-5x supply voltage), and the avalanche energy rating can absorb inductive kickback without an external TVS or zener clamp in most cases. Continuous drain current of 1.9 A covers most signal-relay coils (typically 30-70 mA hold) and small solenoids up to 1.5 A. Always add a flyback diode for relay coils above 100 mA or solenoid inductance above 10 mH to ensure long-term reliability.
Recommended
Small DC Motor PWM Speed Control
For PWM speed control of small DC motors and fans (12-24 V, up to 1.5 A continuous), the IRFL014NTRPBF provides a low-side switch that handles switching losses efficiently thanks to its 7 nC Qg and fast switching speed. At 25 kHz PWM with 50% duty cycle driving 1 A, total losses are approximately 200 mW conduction + 30 mW switching = 230 mW, well within the SOT-223 1 W free-air rating with modest PCB copper. The fully avalanche rating protects against motor back-EMF during braking or stall conditions. For H-bridge bidirectional control, pair two IRFL014NTRPBF as low-side switches with two P-channel MOSFETs as high-side switches, or use the IRFR3711 for higher-current applications.
Recommended
Power ORing in Redundant Supply Architectures
In redundant power systems such as those found in telecom, networking, or industrial control, the IRFL014NTRPBF can implement discrete ORing between two DC supply rails. By placing one MOSFET in series with each supply (source toward load) and tying the gates to the lowest rail, the body diode conducts initially and then the channel turns on, minimizing voltage drop. The 160 milliohm RDS(on) yields 80 mV drop at 0.5 A - far better than a Schottky diode's 300-400 mV drop. The 55 V VDS rating covers 24 V and 48 V telecom bus voltages. For higher-current ORing applications, parallel multiple IRFL014NTRPBF devices or use a dedicated ideal-diode controller such as the LTC4357.
Recommended
LED Driver Low-Side Switch for Strip Lighting
The IRFL014NTRPBF functions as a low-side PWM switch for LED strip lighting, signage, and architectural illumination where moderate current (under 1.5 A per channel) and high PWM frequency are required. Driving the gate at 10 V via a BJT level shifter from a 3.3 V or 5 V microcontroller enables PWM dimming up to 10 kHz without audible flicker or visible color shift. The 1.9 A continuous rating handles three full reels of WS2812B LED strips in parallel (3 x 0.5 A = 1.5 A) or high-power single-color strips up to 30 W at 24 V. The SOT-223 package keeps the driver circuit compact, and the tab can be soldered to copper pour for sustained operation.
Recommended
Recommended Products Summary
Engineering reference data for IRFL014NTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLL014NTRPBF | Si2318CDS | NTF3055-100T1G | NTR4101PT1G |
|---|---|---|---|---|---|
| Package | SOT-223 (TO-261-4) | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same |
| Brand | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | onsemi | onsemi |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V | 60 V | 60 V | 20 V |
| Continuous Drain Current (ID) | 1.9 A at 25 C | 1.9 A at 25 C | 3.0 A at 25 C | 3.0 A at 25 C | 2.4 A at 25 C |
| RDS(on) max at VGS=10V | 160 milliohm | 160 milliohm | 150 milliohm | 100 milliohm | [DATA_NEEDED] |
| Gate Charge (Qg) typical | 7 nC | 7 nC | 5 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate Threshold Voltage (logic-level?) | Standard level (VGS=10V for full enhancement) | Logic-level (3.3V drive OK) | Standard level | Standard level | Logic-level |
| Avalanche Rated | Yes | Yes | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Unit Price at 1000 qty (USD) | 0.36 | 0.40 | 0.32 | 0.38 | 0.42 |
Key Differentiators
- Higher continuous current rating than IRFL010 in same SOT-223 footprint (vs IRFL010NTRPBF (predecessor HEXFET))
- Logic-level variant available as drop-in substitute for direct GPIO drive (vs IRLL014NTRPBF)
- Higher current capability than typical SOT-23 N-MOSFETs (vs 2N7002 (SOT-23 N-MOSFET))
Design Notes
Estimated: at VDS = 24V, VGS = 10V, and ID = 1.5A continuous, conduction loss is I^2 * R = 1.5^2 * 0.16 = 360 mW. The SOT-223 free-air thermal resistance is approximately 150 C/W, yielding a junction temperature rise of 54 C above ambient. At 70 C ambient this places TJ at 124 C - well within the 150 C maximum but with limited margin. To sustain higher currents or higher ambient temperatures, solder the tab to a copper pour of at least 100 mm squared; this reduces thermal resistance to ~50 C/W, lowering the temperature rise to 18 C and extending safe operation to 2.5-3 A continuous.
The SOT-223 tab is electrically connected to the drain, so the PCB copper pour under the tab will be at drain potential. In low-side switching topologies this is acceptable since drain is typically grounded, but in high-side switching the copper pour becomes a live conductor requiring isolation or careful placement away from low-voltage signal traces. Recommended land pattern per JEDEC: 3 pads of approximately 2.0 mm x 1.5 mm each plus a tab pad of 6.5 mm x 3.5 mm with thermal vias (4-6 x 0.3 mm) connecting to an internal ground/power plane. Use a 4 mil stencil for the gate and source pads to avoid solder bridges.
Three common design pitfalls with the IRFL014NTRPBF: (1) Driving the gate directly from a 3.3V or 5V microcontroller GPIO - the part is not logic-level and will not fully enhance, causing excessive RDS(on), heating, and possible failure. Use the IRLL014NTRPBF for logic-level drive or add a BJT gate-driver stage. (2) Exceeding VGS = Β±20V absolute maximum - gate-source overvoltage destroys the thin gate oxide; add a 12-15V zener from gate to source if inductive transients are possible. (3) Switching inductive loads without a flyback path - while the part is avalanche rated, sustained avalanche operation above the rating causes overheating; always add a flyback diode for relays and solenoids.
Place the gate drive components within 10 mm of the gate pin to minimize parasitic inductance and ringing. Add a 10 kohm gate-source pull-down resistor to keep the MOSFET off during MCU reset or power-up, preventing accidental turn-on. Use a separate analog ground island for the source return if switching noisy currents above 1A, and join it to power ground only at one point near the bulk input capacitor. For PWM applications above 100 kHz, consider a 4.7 ohm gate resistor to dampen ringing, though this slows switching edges slightly.
Compliance Information
RoHS and lead-free compliance per Infineon product documentation. REACH compliance per EU regulatory filings. Not AEC-Q100 qualified - this part is not recommended for automotive safety-critical applications; contact Infineon for automotive-grade equivalents in DPAK or D2PAK packages.
