IRFR024NTRPBF vs IRFR5505TRPBF Comparison

Detailed side-by-side comparison of IRFR024NTRPBF by Infineon and IRFR5505TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF βœ“ Active
Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF βœ“ Active

Specification Comparison

Parameter IRFR024NTRPBF IRFR5505TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Product Series HEXFET Power MOSFET (5th generation) β€”
Transistor Type N-Channel MOSFET β€”
Maximum Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 17 A (at TC = 25 C) β€”
Pulsed Drain Current (IDM) 60 A -72 A
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) β€”
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Typical Gate Charge (Qg) 13.3 nC β€”
Total Power Dissipation (PD) 45 W (at TC = 25 C) β€”
Operating Junction Temperature -55 C to +175 C -55 C to +175 C
Package TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR) β€”
RoHS Compliance Compliant (Pb-free / PbF terminations) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Series β€” HEXFET
Polarity β€” P-Channel
Technology β€” IR MOSFET (HEXFET 5th generation)
Drain-Source Voltage (VDS) max β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -18 A
Gate-Source Voltage (VGS) max β€” +/-20 V
On-Resistance RDS(on) max at VGS=-10V β€” 110 mOhm
Total Gate Charge (Qg) β€” 21.3 nC
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Rise Time (tr) β€” [DATA_NEEDED: tr]
Fall Time (tf) β€” [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C β€” 57 W
Thermal Resistance Junction-to-Case (RthJC) β€” 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 50 C/W (typical, DPAK on 1 oz copper)
RoHS Status β€” Compliant (PBF suffix)
Lead-Free β€” Yes (PBF suffix)

Datasheets & Resources

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