IRFR024NTRPBF vs IRFR5505TRPBF 비교

다음의 상세 나란히 비교: IRFR024NTRPBF 제조: Infineon 및 IRFR5505TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR024NTRPBF IRFR5505TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.31 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Product Series HEXFET Power MOSFET (5th generation) —
트랜지스터 유형 N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A -72 A
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
동작 접합 온도 -55 C to +175 C -55 C to +175 C
패키지 TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
MSL 레벨 1 (per JEDEC J-STD-020) —
Series — HEXFET
Polarity — P-Channel
Technology — IR MOSFET (HEXFET 5th generation)
Drain-Source Voltage (VDS) max — -55 V
Continuous Drain Current (ID) at TC=25C — -18 A
Gate-Source Voltage (VGS) max — +/-20 V
On-Resistance RDS(on) max at VGS=-10V — 110 mOhm
Total Gate Charge (Qg) — 21.3 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)
RoHS 상태 — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)

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