IRFR024NTRPBF vs IRFR5505TRPBF तुलना
विस्तृत दोनों ओर की तुलना IRFR024NTRPBF द्वारा Infineon और IRFR5505TRPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFR024NTRPBF | IRFR5505TRPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Product Series | HEXFET Power MOSFET (5th generation) | — |
| ट्रांज़िस्टर प्रकार | N-Channel MOSFET | — |
| Maximum Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) | — |
| Pulsed Drain Current (IDM) | 60 A | -72 A |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Typical Gate Charge (Qg) | 13.3 nC | — |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) | — |
| ऑपरेटिंग जंक्शन तापमान | -55 C to +175 C | -55 C to +175 C |
| पैकेज | TO-252-3 (DPAK, SC-63), surface mount | TO-252AA (DPAK), surface mount |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) | — |
| MSL स्तर | 1 (per JEDEC J-STD-020) | — |
| Series | — | HEXFET |
| Polarity | — | P-Channel |
| Technology | — | IR MOSFET (HEXFET 5th generation) |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -18 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | — | 110 mOhm |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 50 C/W (typical, DPAK on 1 oz copper) |
| RoHS स्थिति | — | Compliant (PBF suffix) |
| Lead-Free | — | Yes (PBF suffix) |