IRFR120NTRLPBF - 100V 9.4A N-Channel HEXFET MOSFET | Infineon
MPN: IRFR120NTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.05 | $10.50 |
| 100 | $0.92 | $92.00 |
| 500 | $0.81 | $405.00 |
| 1,000 | $0.7 | $700.00 |
| 2,500 | $0.62 | $1,550.00 |
Drop-in alternatives for IRFR120NTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR120NTRPBF
✅ Drop-In✓ In Stock
$0.26 / Unit
View Datasheet →IRFR120NTRRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR1205TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.49 / Unit
View Datasheet →IRFR5305TRLPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.38 / Unit
View Datasheet →VBE1102M
✅ Drop-In📋 Reference alternative (not in catalog)
IRFL014NTRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.3 / Unit
View Datasheet →IRFR120NTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ |
| Total Gate Charge (Qg) | 16.7 nC |
| Power Dissipation (PD) at TC=25C | 48 W |
| Operating Junction Temperature Range | -55C to +175C |
| Avalanche Energy Rated | Yes (fully avalanche rated) |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free Finish | Yes (Pb-free) |
IRFR120NTRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input (MOSFET gate) |
| Pin 2 | Drain — Drain terminal (also thermal tab / copper pad connection) |
| Pin 3 | Source — Source terminal |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRFR120NTRLPBF is suitable for 6 applications: 24V Industrial Solenoid and Relay Driver, Low-Side Switch in Non-Isolated Buck DC-DC Converters, Half-Bridge Stage for Small DC Motor Drivers, Automotive 12V/24V Load Switching, Synchronous Rectifier Position in Linear / Buck Regulators, Uninterruptible Power Supply (UPS) and Battery Protection.
24V Industrial Solenoid and Relay Driver
The IRFR120NTRLPBF is well suited as a low-side switch for 24 V industrial solenoid and relay coils, where its 100 V VDS rating provides nearly 4× transient headroom above the 24 V nominal rail and the 9.4 A continuous drain current can comfortably handle most industrial solenoid inrush currents. The fully avalanche-rated body diode withstands the flyback energy when the coil is de-energized, allowing designers to omit a separate freewheeling diode in many cases. Mounted in PG-TO252-3 with a copper thermal pad, it dissipates the steady-state coil current drop without an external heatsink.
Recommended
Low-Side Switch in Non-Isolated Buck DC-DC Converters
The IRFR120NTRLPBF works as the low-side synchronous or hard-switch FET in 12 V/24 V-input buck converters where its 16.7 nC total gate charge keeps gate-drive losses manageable at switching frequencies up to ~200 kHz. The 210 mΩ on-resistance at VGS=10 V delivers acceptable conduction loss for sub-5 A load designs, and the 100 V VDS rating absorbs the transient spikes seen on automotive 12 V and industrial 24 V input rails. Designers typically drive the gate from a 10 V bootstrap supply rather than a 5 V logic rail to realize the full RDS(on) specification.
Recommended
Half-Bridge Stage for Small DC Motor Drivers
In small brushed DC motor and BDC fan driver half-bridges, the IRFR120NTRLPBF provides a 100 V-rated switching pole that can survive the inductive flyback from motor windings at 12 V/24 V supply rails. The 9.4 A continuous drain current covers motors up to ~100 W mechanical output when properly heatsunk on a copper PCB pour, and the fully avalanche-rated body diode eliminates the need for external flyback diodes in most low-power motor designs. Pair it with an Infineon IFX007 or BTS3011 gate driver for a compact, robust driver solution.
Recommended
Automotive 12V/24V Load Switching
The IRFR120NTRLPBF is widely used as a generic load switch in 12 V and 24 V automotive subsystems where it directly controls lamps, fans, heaters and small motor loads. Its 100 V VDS rating handles load-dump transients up to ~40 V common in 12 V automotive electrical systems, and the -55°C to +175°C junction temperature range supports underhood and body-module operating environments. For AEC-Q100-qualified automotive designs the part may need to be paired with an automotive-grade companion in the system-level BOM even though the IRFR120NTRLPBF itself is a commercial-grade Infineon part.
Recommended
Synchronous Rectifier Position in Linear / Buck Regulators
In low-current synchronous buck and SEPIC regulators operating from 12 V or 24 V rails, the IRFR120NTRLPBF can be used in the synchronous rectifier position where its 100 V VDS rating is overkill but acceptable, and its 210 mΩ RDS(on) provides acceptable conduction loss for sub-3 A loads. The 16.7 nC Qg allows efficient switching up to ~200 kHz, and the fully avalanche-rated body diode simplifies dead-time management in the control loop. Designers trade off the higher RDS(on) against cost when the IRFR120NTRLPBF is selected in this role versus a lower-voltage specialized synchronous rectifier.
Recommended
Uninterruptible Power Supply (UPS) and Battery Protection
In low-power UPS modules and battery protection circuits, the IRFR120NTRLPBF serves as a reverse-polarity and over-current disconnect switch. The 100 V VDS rating handles the transients from lead-acid battery disconnect events and the 9.4 A continuous current supports most small UPS loads. The fully avalanche-rated body diode absorbs the inductive kick from upstream transformers and inductors during switching transitions, and the -55°C to +175°C junction temperature range is essential for battery-pack thermal management.
Recommended
Recommended Products Summary
Engineering reference data for IRFR120NTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR120NTRPBF | IRFR120NTRRPBF | IRFR1205TRPBF | VBE1102M |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 55 V | 100 V |
| Continuous Drain Current (ID) | 9.4 A | 9.4 A | 9.4 A | [DATA_NEEDED] | 12 A |
| On-Resistance RDS(on) max | 210 mΩ @ VGS=10V | 210 mΩ @ VGS=10V | 210 mΩ @ VGS=10V | [DATA_NEEDED] | 200 mΩ @ VGS=10V |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC | 16.7 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Avalanche Rated | Yes (fully avalanche rated) | Yes | Yes | [DATA_NEEDED] | [DATA_NEEDED] |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Price (qty 1, USD, as of 2026-09-13) | $1.18 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-standard 100V/9.4A DPAK with verified drop-in equivalents (vs IRFR120NTRPBF)
- Lower RDS(on) than legacy competitors in same package (vs VBE1102M)
- High 48 W power dissipation rating in PG-TO252-3 (vs IRFR1205TRPBF)
Design Notes
Estimated: At PD=10W continuous in PG-TO252-3 (theta_JA ~50 C/W on a 1-oz 1-square-inch copper pour), the junction temperature rise above ambient is roughly 50×10 = 500°C above ambient, which would exceed the 175°C rating. In practice this means the IRFR120NTRLPBF cannot continuously dissipate 10W without substantial thermal management. Use the largest practical drain-tab copper area and thermal vias to a bottom-side pour; in free air (no heatsink) limit steady-state dissipation to ~2 W.
Solder the drain tab (Pin 2) directly to a continuous copper pour on the top layer. This pad carries both the high drain current path AND the primary thermal path - a starved land pattern will both limit current handling and cause thermal runaway. Recommended minimum copper: 1 square inch of 2-oz copper, or equivalent thermal-via array to an internal plane. Route the gate trace away from the drain switching node to avoid dv/dt-induced false turn-on.
Do not drive the IRFR120NTRLPBF gate directly from a 3.3 V or 5 V microcontroller GPIO - the 210 mΩ RDS(on) spec assumes VGS=10 V. At VGS=4.5 V, RDS(on) typically rises to ~300 mΩ or higher, which can cause overheating at full load. Use a gate-driver IC (e.g., TC4427, IFX007TAUMA1) or a simple 10 V charge pump. Also avoid exceeding the VGS maximum rating (typically ±20 V) by clamping gate transients with a 12 V Zener if the gate is driven from a 24 V logic-level source.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial-grade part. For automotive designs requiring AEC-Q100, look at Infineon's automotive-grade HEXFET equivalents.
