IRFR2405TRPBF vs IRFR5305TRPBF Comparison

Detailed side-by-side comparison of IRFR2405TRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF βœ“ Active
Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRPBF IRFR5305TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.32
Manufacturer Infineon Technologies β€”
Part Status Active β€”
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 56 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
On-Resistance RDS(on) max at VGS=10V 16 mOhm β€”
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] β€”
Total Gate Charge (Qg) 70 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) + Tab β€”
MSL Level 1 1
RoHS Status Compliant (Lead-Free PBF suffix) Compliant (Pb-free PBF suffix)
Halogen-Free [DATA_NEEDED: halogen-free status] β€”
Avalanche Rated Yes (100% avalanche tested) β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) Max β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” 31 A
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V β€” 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) β€” -2 V to -4 V
Gate Charge (Qg) Typ β€” [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C β€” 110 W
Single-Pulse Avalanche Energy (EAS) β€” 270 mJ
Operating Temperature Range β€” -55 C to +175 C
Lead-Free Finish β€” Yes (PBF suffix)

Datasheets & Resources

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