IRFR2405TRPBF vs IRFR5305TRPBF 比較

詳細並排比較 IRFR2405TRPBF 由 Infineon 與 IRFR5305TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 啟用中
Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中

規格比較

參數 IRFR2405TRPBF IRFR5305TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (PD) at Tc=25C 110 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
腳位數 3 (Gate, Drain, Source) + Tab —
MSL 等級 1 1
RoHS 狀態 Compliant (Lead-Free PBF suffix) Compliant (Pb-free PBF suffix)
無鹵素 [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
工作溫度範圍 — -55 C to +175 C
Lead-Free Finish — Yes (PBF suffix)

資料表與資源

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