IRFR3607TRPBF vs IRFR3504ZTRPBF Comparison

Detailed side-by-side comparison of IRFR3607TRPBF by Infineon and IRFR3504ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR3607TRPBF IRFR3504ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.28
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID, Tc) 56 A —
Calculated Die Drain Current 80 A —
On-State Resistance (RDS(on)) 9 mOhm @ VGS=10V, ID=46A —
Gate Threshold Voltage (VGS(th)) 4 V —
Total Gate Charge (Qg) 56 nC —
Gate-to-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD, Tc) 140 W —
Thermal Resistance (RthJC) 1.0 C/W —
Operating Temperature Range -55C to +175C (TJ max 175C per datasheet convention) —
Package TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET (planar DMOS) HEXFET (N-Channel Silicon MOSFET)
Avalanche SOA Fully characterized —
RoHS / Lead-Free Compliant / Pb-free (PBF suffix, JESD-609 e3) —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, TC=25°C) — 42 A
Continuous Drain Current (ID, TC=100°C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed]
On-Resistance RDS(on) max @ VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th) typ) — 1.8 V (logic-level)
Total Gate Charge (Qg) typ — 30 nC
Power Dissipation (PD) at TC=25°C — 90 W
Operating Junction Temperature — -55°C to +175°C
RoHS Status — Compliant
MSL Level — 1 (unlimited)
Avalanche Rated — Yes (improved repetitive avalanche rating)

Datasheets & Resources

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