IRFR3504ZTRPBF - 40V 77A 9mΩ HEXFET N-Channel MOSFET | Infineon
MPN: IRFR3504ZTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.85 | $0.85 |
| 10 | $0.65 | $6.50 |
| 100 | $0.48 | $48.00 |
| 500 | $0.39 | $195.00 |
| 1,000 | $0.33 | $330.00 |
| 2,500 | $0.28 | $700.00 |
IRFR3504ZTRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for switching and amplifying signals in power electronics. Within the broader semiconductor taxonomy, a MOSFET sits under discrete semiconductors -> transistors -> MOSFETs, and within the power-management family it serves as the primary switching element in DC-DC converters, motor drivers, and synchronous rectification. The HEXFET process refers to Infineon's hexagonal cell layout, which maximizes silicon utilization and minimizes RDS(on) per unit area.
Key features of this part include a 9 mΩ max RDS(on) at VGS=10 V, 30 nC typical total gate charge (Qg), logic-level VGS(th) of approximately 1.0–2.0 V enabling full enhancement at 4.5 V gate drive, 175 °C maximum operating junction temperature, and avalanche-rated construction for inductive-switching robustness. The device is qualified per JEDEC standards and supplied on tape-and-reel for high-volume automated assembly.
Typical applications include high-side/low-side switching in synchronous buck converters, BLDC and brushed DC motor drive, battery protection and load switching in 12 V automotive subsystems, solenoid and relay drivers, and OR-ing / hot-swap circuits. The 40 V drain-source rating provides ample headroom for nominal 12 V and 24 V bus rails including transients.
When designing with this device, gate-drive layout is critical: keep the gate-loop loop area under 1 cm² to limit ringing, use a gate-source resistor of 10–100 Ω to dampen oscillations, and derate continuous drain current for PCB copper area and ambient temperature. The DPAK footprint dissipates 90 W at TC=25 °C but only a fraction of that in free air; a thermal pad with sufficient copper pour is mandatory for high-current designs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for sourcing and implementing this part.
Drop-in alternatives for IRFR3504ZTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR3504ZTRPBF (same form factor and footprint) — differing in Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR3504ZTRRPBF
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IRFR1010Z
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IRFR3607TRPBF
✅ Drop-In✓ In Stock
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View Datasheet →STD64N4F6AG
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STD95N4F3
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IRFR3504ZTRPBF Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, TC=25°C) | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | 9 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | 1.8 V (logic-level) |
| Total Gate Charge (Qg) typ | 30 nC |
| Power Dissipation (PD) at TC=25°C | 90 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-252AA (DPAK) surface mount |
| Mounting Type | Surface Mount |
| Technology | HEXFET (N-Channel Silicon MOSFET) |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited) |
| Avalanche Rated | Yes (improved repetitive avalanche rating) |
IRFR3504ZTRPBF Pin Configuration
| Pin 1 | Gate — Logic-level gate drive input (5V compatible) |
| Pin 2 | Drain — Power drain terminal; electrically tied to exposed tab |
| Pin 3 | Source — Power source terminal (power return) |
| Pin Tab | Drain (Tab) — Exposed metal tab - same node as Pin 2 (Drain); solder to thermal copper pour |
Safe Operating Area (DC)
Typical Applications
IRFR3504ZTRPBF is suitable for 6 applications: Synchronous Buck DC-DC Converter, BLDC / Brushed DC Motor Drive, 12 V Automotive Load Switching, Battery Protection / Hot-Swap OR-ing, Solenoid and Relay Driver, Power Tool / Cordless Appliance Drive.
Synchronous Buck DC-DC Converter
The IRFR3504ZTRPBF's 9 mΩ RDS(on) and 30 nC Qg make it an excellent low-side synchronous rectifier in 12 V-to-3.3 V/5 V buck converters up to 20 A continuous. Its 40 V VDS provides ample margin above a 12 V nominal bus including ringing, and the logic-level VGS(th) of 1.8 V lets a 5 V gate driver fully enhance the channel. In a typical 4-switch buck topology, this part replaces Schottky rectifiers to boost efficiency by 3–5%. Mount the DPAK tab to at least 1 sq. inch of copper to handle continuous conduction loss without thermal throttling.
Recommended
BLDC / Brushed DC Motor Drive
With 42 A continuous drain current and a 175 °C junction rating, the IRFR3504ZTRPBF drives small to mid-sized BLDC and brushed DC motors up to roughly 30 A per phase in three-phase H-bridge topologies. Its avalanche-rated construction absorbs the back-EMF energy during PWM commutation and braking, while 9 mΩ RDS(on) keeps I²R conduction loss manageable - critical for battery-powered tools and e-bikes where every watt of loss reduces runtime. Pair it with the DRV8301DCAR or DRV8872DDAR gate driver for a complete half-bridge stage.
Recommended
12 V Automotive Load Switching
The 40 V VDS rating of the IRFR3504ZTRPBF comfortably exceeds the 12 V automotive bus under load-dump transients up to 35 V, making it a drop-in high-side or low-side switch for body-electronics modules. With 9 mΩ RDS(on), a 10 A load only dissipates 0.9 W - low enough for the DPAK package to handle with a modest PCB copper pour. It is widely used in LED lighting modules, seat controllers, and accessory power outlets where logic-level gate drive is provided directly by a 5 V microcontroller GPIO or body controller IC.
Recommended
Battery Protection / Hot-Swap OR-ing
The IRFR3504ZTRPBF serves as a low-loss ideal-diode OR-ing element between paralleled battery packs or for hot-swap insertion in 12 V systems. Its 9 mΩ RDS(on) drops only 90 mV at 10 A - far below a Schottky diode - and the body diode conducts during transient reverse events. In hot-swap circuits, the MOSFET's 175 °C rating and avalanche energy absorb inrush energy as the load capacitance charges through a controlled soft-start ramp.
Recommended
Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the IRFR3504ZTRPBF's 42 A peak current capability and logic-level gate drive. A single DPAK-mounted part can switch 24 V solenoids up to 10 A continuous, dissipating only a few watts under steady state. The avalanche rating absorbs the inductive kickback when the solenoid de-energizes, eliminating the need for an external flyback diode in many designs and reducing PCB area.
Recommended
Power Tool / Cordless Appliance Drive
In cordless drills, leaf blowers, and other 18 V/20 V lithium-ion battery-powered tools, the IRFR3504ZTRPBF drives brushed universal motors with low conduction loss thanks to 9 mΩ RDS(on) and minimal gate drive complexity at logic-level VGS. Its small DPAK footprint simplifies compact motor-control PCB layouts, while the 175 °C junction rating tolerates the high ambient temperatures inside sealed tool housings. Pair it with a low-cost gate driver like the FAN7392 or DRV8873HPWPRQ1 for a robust, field-proven power stage.
Recommended
Recommended Products Summary
Engineering reference data for IRFR3504ZTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR3504ZTRRPBF | IRFR1010Z | IRFR3607 | STD64N4F6AG | STD95N4F3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| VDS max | 40 V | 40 V | 55 V | 75 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 9 mΩ | 9 mΩ | ~10.5 mΩ | ~14 mΩ | ~9 mΩ | ~12 mΩ |
| Continuous ID (TC=25°C) | 42 A | 42 A | 42 A | 56 A | 64 A | 95 A |
| Logic-Level Gate Drive (5V) | Yes | Yes | Yes | No (standard level) | Yes | No (standard level) |
| Power Dissipation (PD) | 90 W | 90 W | 110 W | 140 W | 100 W | 110 W |
Key Differentiators
- Logic-level gate drive at 5V VGS without bootstrap (vs IRFR3607)
- Lower RDS(on) than legacy IRFR3607 at same package (vs IRFR3607)
- Verified cross-brand drop-in with STD64N4F6AG (vs STD64N4F6AG)
Design Notes
The DPAK package is rated 90 W at TC=25°C, but in free air (TA=25°C) only a few watts can be dissipated without substantial PCB copper. Estimate: with 1 sq. inch of 2-oz copper pour under the tab, theta_JA falls to roughly 40 °C/W, allowing ~3 W continuous at 25 °C ambient. For 10 A continuous conduction (10 mΩ × 100 A² = ~10 W), use at least 4 sq. inches of copper or an active heatsink. Always derate TC by at least 50 °C to keep the junction below the 175 °C absolute maximum.
Solder the exposed tab with a thermal pad designed for DPAK (e.g. PAD shape with 6 mm² center void). Use multiple thermal vias (0.3 mm diameter, 1 mm pitch) under the tab to inner copper planes. Gate-drive traces should be at least 0.2 mm wide, routed away from the drain switching node, and the gate resistor (10–100 Ω) placed within 5 mm of the gate pin to dampen parasitic oscillations during fast switching edges.
Do not exceed VGS=±20 V - a 12 V gate driver above 18 V can damage the gate oxide. Also avoid operating at VGS below 4.5 V: the part's logic-level rating assumes a fully-enhanced channel, and partial enhancement at 2–3 V gate drive causes the MOSFET to operate in its linear region with high losses and potential thermal runaway. Always verify drain-source voltage margin under worst-case transient conditions (load dump, inductive kickback) before finalizing the design.
In synchronous buck or half-bridge topologies, the high dv/dt on the switching node (up to 5 V/ns) can couple into the gate trace through the MOSFET's Cgd (Miller capacitance). Add a 10 kΩ gate-source pull-down resistor to keep the FET off during start-up transient, and consider a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 10% of VDS. The 30 nC Qg is fast enough that gate-drive loop inductance must stay below 10 nH - keep the gate driver within 10 mm of the gate pin.
Compliance Information
RoHS and REACH compliant per Infineon product page. JEDEC-qualified per datasheet description. Halogen-free status not explicitly stated in web data.
