IRFR3607TRPBF vs IRLR2905TRPBF Comparison
Detailed side-by-side comparison of IRFR3607TRPBF by Infineon and IRLR2905TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3607TRPBF | IRLR2905TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.61 |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 75 V | 55 V |
| Continuous Drain Current (ID, Tc) | 56 A | — |
| Calculated Die Drain Current | 80 A | — |
| On-State Resistance (RDS(on)) | 9 mOhm @ VGS=10V, ID=46A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 56 nC | — |
| Gate-to-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD, Tc) | 140 W | — |
| Thermal Resistance (RthJC) | 1.0 C/W | — |
| Operating Temperature Range | -55C to +175C (TJ max 175C per datasheet convention) | — |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar DMOS) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche SOA | Fully characterized | — |
| RoHS / Lead-Free | Compliant / Pb-free (PBF suffix, JESD-609 e3) | — |
| FET Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Operating Junction Temperature | — | -55C to +175C |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |