IRFR3806TRPBF vs IRFR1018ETRPBF Comparison
Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFR1018ETRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3806TRPBF | IRFR1018ETRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.36 |
| Transistor Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 43 A | β |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | β |
| Total Gate Charge (Qg) | 22 nC | 46 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | β |
| Package / Case | TO-252AA (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET |
| Operating Temperature Range | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Number of Units in IC | 1 | β |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Avalanche Rated | Yes (HEXFET family) | Yes |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) | β | 79 A (Tc) |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max @ Vgs=10V | β | 8.4 mΞ© |
| Rds(on) Max @ Vgs=4.5V | β | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | 2.0 V to 4.0 V |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Maximum Power Dissipation (Pd) | β | 110 W (Tc) |
| Package | β | TO-252AA (D-Pak) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| MSL Level | β | 1 |