IRFR3806TRPBF - 60V 43A N-Ch HEXFET MOSFET, DPAK | Infineon
MPN: IRFR3806TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.64 | $640.00 |
| 3,000 | $0.52 | $1,560.00 |
Drop-in alternatives for IRFR3806TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR1018ETRPBF
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View Datasheet →IRFR4620TRLPBF
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View Datasheet →IRFR2405TRLPBF
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View Datasheet →IRFR2405TRPBF
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View Datasheet →IRFZ48NSTRLPBF
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View Datasheet →NTD4906N
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR5305TRPBF
✅ Drop-In✓ In Stock
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View Datasheet →IRFR3806TRPBF Maximum Ratings & Electrical Characteristics
| Transistor Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 43 A |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V |
| Total Gate Charge (Qg) | 22 nC |
| Power Dissipation (Pd) at Tc = 25 C | 71 W |
| Package / Case | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (IR MOSFET) |
| Operating Temperature Range | -55 C to +175 C |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Number of Units in IC | 1 |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) |
| Avalanche Rated | Yes (HEXFET family) |
IRFR3806TRPBF Pin Configuration
| Pin 1 | Gate — Gate control input (drive to +10 V for full enhancement) |
| Pin 2 | Drain — Drain terminal (also connected to the metal tab on the back) |
| Pin 3 | Source — Source terminal (low-side reference for gate drive) |
| Pin TAB | Drain — Metal back tab - electrically Drain, serves as main thermal pad for heatsinking |
Safe Operating Area - IRFR3806TRPBF (TO-252AA, Tc = 25 C)
Typical Applications
IRFR3806TRPBF is suitable for 7 applications: Synchronous Rectification in 24-48 V SMPS, Uninterruptible Power Supply (UPS) Battery Switch, 24 V Brushless DC Motor Drive, Hard-Switched High-Frequency DC-DC Primary Switch, Solar Charge Controller / Battery Management, Automotive 12 V / 24 V Load Switch, Telecom 48 V Hot-Swap Controller.
Synchronous Rectification in 24-48 V SMPS
The IRFR3806TRPBF is purpose-built for synchronous rectification on the secondary side of 24-48 V SMPS. Its 60 V VDS rating gives 12 V of headroom above a nominal 48 V bus while the 15.8 mOhm RDS(on) and 22 nC Qg keep both conduction and switching losses low, yielding converter efficiencies above 95% in typical half-brick and quarter-brick designs. The HEXFET avalanche-rated body diode removes the need for an external anti-parallel Schottky, simplifying layout and reducing part count in isolated DC-DC bricks.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
In UPS systems the IRFR3806TRPBF serves as the low-side disconnect and battery-rail switch between the backup battery pack and the DC bus. The 43 A continuous drain current at Tc supports multi-kilowatt UPS modules, and the 60 V rating covers 48 V nominal battery configurations with comfortable transient margin. Low RDS(on) keeps voltage drop across the switch under 0.7 V at full load, preserving battery runtime and reducing heat sinking requirements in the confined UPS chassis.
Recommended
24 V Brushless DC Motor Drive
The IRFR3806TRPBF is well suited to three-phase BLDC motor drives running from a 24 V or 36 V supply. The 60 V breakdown absorbs inductive flyback during PWM commutation without avalanche stress, the 43 A continuous rating covers sub-1 kW motor phases, and the 22 nC Qg allows 25-50 kHz PWM frequencies with manageable driver loss. The DPAK footprint fits tightly on the in-board H-bridge, leaving room for current-sense amplifiers and Hall-sensor conditioning.
Recommended
Hard-Switched High-Frequency DC-DC Primary Switch
The IRFR3806TRPBF operates effectively as a primary-side hard switch in 100-500 kHz forward and active-clamp forward converters for 48 V input telecom bricks. The 60 V VDS margin handles reflected-load transients on the primary winding, and the low Qg (22 nC) keeps gate-drive loss below 1% of total loss at typical switching frequencies. Designers appreciate that the HEXFET process delivers a robust body diode for the active-clamp reset path without requiring a separate avalanche-rated part.
Recommended
Solar Charge Controller / Battery Management
In solar charge controllers and battery management systems (BMS), the IRFR3806TRPBF functions as a low-side load-disconnect and reverse-polarity protection switch on 24 V / 36 V battery stacks. Its 60 V VDS comfortably exceeds 36 V nominal systems, and the 15.8 mOhm RDS(on) keeps conduction losses below 1% at typical 20 A charge currents. The -55 C to +175 C junction range supports outdoor enclosures operating across wide ambient temperature swings.
Recommended
Automotive 12 V / 24 V Load Switch
Although not AEC-Q100 qualified, the IRFR3806TRPBF is widely used in non-safety automotive subsystems (infotainment, interior lighting, accessory power) as a high-side or low-side load switch for 12 V and 24 V vehicle buses. The 60 V VDS absorbs load-dump transients up to ISO 7637-2 pulse profiles when paired with an external TVS, and the DPAK footprint bolts to chassis ground straps for additional heatsinking in engine-bay applications.
Recommended
Telecom 48 V Hot-Swap Controller
In telecom -48 V systems, the IRFR3806TRPBF can serve as the inrush-limiting hot-swap switch when upstream protection is provided. The 60 V VDS handles -48 V plus inductive ringing from backplane capacitance, and the 71 W power-dissipation rating supports sustained load currents up to ~30 A before thermal limiting. Pair with a dedicated hot-swap controller IC for accurate current-limit foldback during board insertion into a live backplane.
Recommended
Recommended Products Summary
Engineering reference data for IRFR3806TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR1018ETRPBF | IRFR2405TRPBF | IRFZ48NSTRLPBF | NTD4906N | IRFR5305TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Infineon Technologies |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage VDS | 60 V | 60 V | 55 V | 55 V | 60 V | -55 V (P-channel) |
| Continuous Drain Current ID | 43 A (Tc) | 56 A (+30%) | 64 A (+49%) | 64 A (+49%) | 49 A (+14%) | 31 A (-28%) |
| RDS(on) max at VGS = 10 V | 15.8 mOhm | ~5 mOhm (lower) | ~10 mOhm (lower) | ~14 mOhm (lower) | ~16 mOhm (similar) | ~65 mOhm (P-channel) |
| Total Gate Charge Qg | 22 nC | Higher | Higher | Similar | Similar | Higher |
| Power Dissipation Pd | 71 W | 110 W | 110 W | 110 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | HEXFET (planar) | HEXFET | HEXFET | HEXFET | Trench MOSFET | HEXFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
| Approx. Unit Price (qty 1, USD) | 1.42 | ~1.85 | ~1.20 | ~0.95 | ~1.10 | ~1.50 |
Key Differentiators
- Higher continuous current rating in same DPAK footprint vs IRFR2405 family (vs IRFR2405TRPBF)
- HEXFET process with avalanche-rated body diode (vs NTD4906N (onsemi))
- Lower gate charge than legacy 60 V DPAK parts (vs IRFZ48NSTRLPBF)
- Established Infineon supply chain with automotive-grade options (vs NTD4906N (onsemi))
Design Notes
Estimated: at VDS = 30 V, ID = 20 A and RDS(on) = 15.8 mOhm, conduction loss is P = I^2 * R = 400 * 0.0158 = 6.32 W. On a DPAK footprint with ~25 x 25 mm of 2 oz copper on a standard FR4 board, theta_JA is approximately 50 C/W, giving a junction temperature rise of 316 C above ambient - which exceeds the 175 C limit. Either reduce continuous current to ~15 A, add a small clip-on heatsink, or expand the copper pour to >= 50 x 50 mm to bring theta_JA down to ~35 C/W (then Tj rise = 6.32 * 35 = 221 C - still too high). For 20 A continuous operation an external heatsink or fan is mandatory.
Keep the gate-drive loop (gate pin -> series gate resistor -> driver output -> source return) physically small - ideally under 1 cm^2 of loop area. Excessive loop inductance causes ringing and dv/dt-induced false turn-on in half-bridge topologies. Place the gate resistor (typically 10-47 ohm) immediately adjacent to the gate pin. Use a Kelvin source connection if available on the package, or route the source-return of the gate driver directly to the package source lead rather than to the power ground plane.
Do not drive the IRFR3806TRPBF directly from a 3.3 V or 5 V logic output - it requires 10 V VGS for full enhancement. At VGS = 4.5 V the channel is not fully inverted and RDS(on) is several times higher than the datasheet maximum, causing severe conduction loss and thermal runaway. Always use a dedicated gate-driver IC (e.g. IR2110, IRS2008, or similar) powered from a 10-12 V rail. Also, ensure VGS never exceeds the +/- 20 V absolute maximum - add a 12 V Zener gate clamp if the driver can overshoot.
The DPAK back tab is the main thermal path AND the Drain electrical terminal. It MUST be soldered to a copper pour that is connected to the Drain circuit - a poorly soldered or missing tab will increase thermal resistance from ~50 C/W to over 100 C/W and will also break the electrical connection. Use a thermal pad with multiple thermal vias (typically 9-16 vias in a 3x3 or 4x4 array) to conduct heat to internal copper planes. Keep the Drain copper pour isolated from low-voltage signal traces.
Switching a 43 A load with 22 nC Qg in 10 ns produces a peak gate-drive current of I = Qg / tr = 22 nC / 10 ns = 2.2 A, which can radiate EMI if the gate loop is not contained. Add a ferrite bead in series with the gate resistor for high-frequency damping, and place a small (1-10 nF) ceramic bypass capacitor directly at the driver supply pin. For automotive or industrial applications targeting CISPR 22 / EN 55022 Class B, plan for a common-mode choke on the DC bus and an input pi-filter (LC) at the connector.
Compliance Information
RoHS compliant per DigiKey/Mouser product listings (PBF suffix confirms lead-free). Halogen-free per Infineon product page. Not AEC-Q100 qualified - for automotive safety applications, choose an AEC-Q100 qualified DPAK part from the Site MPN list (e.g. IPD-series).
