IRFR5505TRPBF vs IRFR024NTRPBF Comparison
Detailed side-by-side comparison of IRFR5505TRPBF by Infineon and IRFR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5505TRPBF | IRFR024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.31 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | β |
| Polarity | P-Channel | β |
| Technology | IR MOSFET (HEXFET 5th generation) | β |
| Drain-Source Voltage (VDS) max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -18 A | β |
| Pulsed Drain Current (IDM) | -72 A | 60 A |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | β |
| Total Gate Charge (Qg) | 21.3 nC | β |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Rise Time (tr) | [DATA_NEEDED: tr] | β |
| Fall Time (tf) | [DATA_NEEDED: tf] | β |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | β |
| Package | TO-252AA (DPAK), surface mount | TO-252-3 (DPAK, SC-63), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (PBF suffix) | β |
| Lead-Free | Yes (PBF suffix) | β |
| Product Series | β | HEXFET Power MOSFET (5th generation) |
| Transistor Type | β | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) | β | 17 A (at TC = 25 C) |
| On-Resistance (RDS(on)) | β | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | β | 13.3 nC |
| Total Power Dissipation (PD) | β | 45 W (at TC = 25 C) |
| Packaging | β | Tape and Reel (TR) |
| RoHS Compliance | β | Compliant (Pb-free / PbF terminations) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |