IRFR5505TRPBF vs IRFR024NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5505TRPBF sa pamamagitan ng Infineon at IRFR024NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR5505TRPBF | IRFR024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | — |
| Technology | IR MOSFET (HEXFET 5th generation) | — |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | 60 A |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252-3 (DPAK, SC-63), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Product Series | — | HEXFET Power MOSFET (5th generation) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 17 A (at TC = 25 C) |
| On-Resistance (RDS(on)) | — | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | — | 13.3 nC |
| Total Power Dissipation (PD) | — | 45 W (at TC = 25 C) |
| Packaging | — | Tape and Reel (TR) |
| RoHS Compliance | — | Compliant (Pb-free / PbF terminations) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |