IRFR5505TRPBF vs IRFR024NTRPBF 비교

다음의 상세 나란히 비교: IRFR5505TRPBF 제조: Infineon 및 IRFR024NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR5505TRPBF IRFR024NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.31
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Series HEXFET —
Polarity P-Channel —
Technology IR MOSFET (HEXFET 5th generation) —
Drain-Source Voltage (VDS) max -55 V —
Continuous Drain Current (ID) at TC=25C -18 A —
Pulsed Drain Current (IDM) -72 A 60 A
Gate-Source Voltage (VGS) max +/-20 V —
On-Resistance RDS(on) max at VGS=-10V 110 mOhm —
Total Gate Charge (Qg) 21.3 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Rise Time (tr) [DATA_NEEDED: tr] —
Fall Time (tf) [DATA_NEEDED: tf] —
Maximum Power Dissipation (PD) at TC=25C 57 W —
동작 접합 온도 -55 C to +175 C -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) 2.2 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 50 C/W (typical, DPAK on 1 oz copper) —
패키지 TO-252AA (DPAK), surface mount TO-252-3 (DPAK, SC-63), surface mount
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Product Series — HEXFET Power MOSFET (5th generation)
트랜지스터 유형 — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)
MSL 레벨 — 1 (per JEDEC J-STD-020)

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