IRFS3006TRL7PP vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IRFS3006TRL7PP by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS3006TRL7PP BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology HEXFET (IR MOSFET™ planar) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 240 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
On-Resistance RDS(on) max 2.1 mΩ (per Mouser snippet) 7.6 mOhm
On-Resistance RDS(on) typ 1.5 mΩ —
Gate Charge (Qg) 200 nC (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V (max, typical)
Power Dissipation (PD) at Tc 375 W —
Operating Junction Temperature -55 °C to +175 °C -55 C to +175 C
Package D2PAK (TO-263), 7-Lead, Surface Mount —
Mounting Type Surface Mount Surface Mount
Body Diode Intrinsic, avalanche-rated —
MSL Level 1 (unlimited) —
RoHS Status Compliant —
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
RθJC Thermal Resistance [DATA_NEEDED: junction-to-case thermal resistance] —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Package / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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