IRFS3006TRL7PP vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IRFS3006TRL7PP by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFS3006TRL7PP - 60V 240A N-Ch HEXFET MOSFET | D2PAK-7 | Infineon
IRFS3006TRL7PP β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IRFS3006TRL7PP | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.82 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFETβ’ planar) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 240 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | β |
| On-Resistance RDS(on) max | 2.1 mΞ© (per Mouser snippet) | 7.6 mOhm |
| On-Resistance RDS(on) typ | 1.5 mΞ© | β |
| Gate Charge (Qg) | 200 nC (typical) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Power Dissipation (PD) at Tc | 375 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | D2PAK (TO-263), 7-Lead, Surface Mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated | β |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| RΞΈJC Thermal Resistance | [DATA_NEEDED: junction-to-case thermal resistance] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |