IRFS3006TRL7PP - 60V 240A N-Ch HEXFET MOSFET | D2PAK-7 | Infineon
MPN: IRFS3006TRL7PP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $2.98 | $29.80 |
| 100 | $2.42 | $242.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.75 | $1,750.00 |
IRFS3006TRL7PP Overview
A power MOSFET is a voltage-controlled, majority-carrier semiconductor switch that modulates current flow between its drain and source terminals under the control of a gate voltage, making it the fundamental building block of modern DC-DC converters, motor controllers, and load-management circuits. Within the broader taxonomy, this device sits in the N-channel enhancement-mode power MOSFET category, which belongs to discrete power semiconductors and the wider power management ecosystem. The HEXFET cell structure used by Infineon delivers an excellent figure of merit (FOM = RDS(on) × Qg) that minimizes both conduction and switching losses simultaneously.
Key features of the IRFS3006TRL7PP include a maximum drain-source voltage (VDS) of 60 V, a gate charge (Qg) of approximately 200 nC for fast switching transitions, and a continuous drain current of 240 A at case temperature (Tc). The 7-lead D2PAK (TO-263) package provides an exposed metal tab that serves as the drain terminal and enables direct PCB heatsink attachment for high-power dissipation up to 375 W. Logic-level-compatible gate drive thresholds simplify interface to standard gate-driver ICs.
Architecturally, the IRFS3006TRL7PP uses Infineon's proven planar HEXFET stripe-cell geometry with an intrinsic body diode capable of supporting hardswitched and resonant topologies. The avalanche-rated die supports unclamped inductive switching events, and the optimized body-diode dv/dt immunity suits bridge configurations where reverse recovery must be controlled. Compared with trench MOSFET generations, this planar HEXFET retains a wider safe operating area (SOA) for linear-mode and hot-swap use cases.
Typical applications of the IRFS3006TRL7PP include high-current synchronous rectification in server and telecom DC-DC converters, 12 V/24 V automotive ECU and load-switch circuits, hot-swap controllers and OR-ing FETs in redundant -48 V telecom power shelves, battery protection and high-current BMS switching, and brushed/brushless DC motor drive bridges. The D2PAK-7 footprint allows direct substitution for other 60 V-class HEXFETs in existing layouts.
When designing with this part, ensure that the gate-driver can source and sink the gate charge (Qg ≈ 200 nC) within the desired switching time, and keep the gate-loop inductance below 5 nH to control ringing. For continuous high-current operation, attach the D2PAK tab to a minimum 1 square inch of copper pour or an external heatsink to maintain junction temperature below the 175 °C maximum rating.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRFS3006TRL7PP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFS3006TRL7PP (same form factor and footprint) — differing in Technology, Drain-Source Voltage (VDS), MSL Level, On-Resistance RDS(on) max, Operating Junction Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFS3006-7PPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS7534-7PPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS3007-7PPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IPB60R040CFD7ATMA1
✅ Drop-In✓ In Stock
$5.19 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IRFS3006TRL7PP Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET™ planar) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 240 A |
| On-Resistance RDS(on) max | 2.1 mΩ (per Mouser snippet) |
| On-Resistance RDS(on) typ | 1.5 mΩ |
| Gate Charge (Qg) | 200 nC (typical) |
| Power Dissipation (PD) at Tc | 375 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | D2PAK (TO-263), 7-Lead, Surface Mount |
| Mounting Type | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
IRFS3006TRL7PP Pin Configuration
| Pin 1 | Source — Source terminal (Kelvin source-sense on 7-lead variant) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Source — Source-sense (Kelvin) for reduced gate-loop inductance |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | NC — Not connected (per datasheet pinout) |
| Pin 7 | NC — Not connected (per datasheet pinout) |
| Pin TAB | Drain — Drain terminal (also serves as thermal pad for heatsinking) |
Safe Operating Area (DC)
Typical Applications
IRFS3006TRL7PP is suitable for 6 applications: 48 V Telecom OR-ing and Hot-Swap, High-Current Synchronous Rectification, Automotive 12 V/24 V Load Switching and ECU Power, Battery Protection and BMS Power Path, Brushed/Brushless DC Motor Drive, Solar PV / Battery Inverter Switch.
48 V Telecom OR-ing and Hot-Swap
The IRFS3006TRL7PP is a strong fit for -48 V telecom OR-ing and hot-swap controllers where it must carry 100-200 A continuously with minimal forward drop. Its 1.5 mΩ typical RDS(on) yields ~150 mV drop at 100 A, well within the typical 300 mV OR-ing FET budget, and the 240 A continuous rating provides ample margin for inrush transients. The 7-lead D2PAK package exposes Kelvin source pins that suppress gate-loop inductance, critical for clean turn-on under high di/dt. When used in N+1 redundant -48 V shelves, designers can parallel two IRFS3006TRL7PPs for 400 A class systems; Infineon's matched die tolerances simplify current sharing.
Recommended
High-Current Synchronous Rectification
The IRFS3006TRL7PP excels as the synchronous rectifier FET in 48 V-input, 12 V-output DC-DC converters delivering 500 W to 2 kW. The combination of 60 V VDS rating (covering 48 V nominal plus transients), 1.5 mΩ RDS(on), and 200 nC Qg keeps both conduction and switching losses low at 100-200 kHz. In a hard-switched buck, two IRFS3006TRL7PPs can replace Schottky diodes and reclaim 1-3 % efficiency. The D2PAK-7 tab allows direct attachment to a copper heatsink spreader; designers should size the copper pour to keep Tj below 125 °C at full load.
Recommended
Automotive 12 V/24 V Load Switching and ECU Power
The IRFS3006TRL7PP is suitable for automotive 12 V and 24 V load-switch applications such as high-current ECU power distribution, glow-plug control in diesel systems, and electric power steering (EPS) return-path management. Its 240 A continuous current rating supports the largest automotive loads, while the 60 V VDS provides generous headroom for 24 V jump-start transients (which can briefly reach 36 V on 24 V systems). The D2PAK-7 package is compatible with automated SMT assembly lines used in automotive production; for AEC-Q101 qualified builds, designers should specify the screened variant from Infineon's automotive product line.
Recommended
Battery Protection and BMS Power Path
The IRFS3006TRL7PP serves as the main disconnect FET in lithium-ion battery management systems (BMS) for e-mobility, e-bikes, and stationary energy storage. Its 1.5 mΩ RDS(on) minimizes voltage drop across the protection FET, preserving usable battery capacity at high discharge currents (100-200 A). The avalanche-rated body diode handles reverse-current events when inductive loads are switched off, an essential feature for protecting Li-ion cells from over-current conditions. The D2PAK-7 footprint is large enough to dissipate the I²R losses at sustained 200 A discharge, but designers should still attach the tab to substantial copper for thermal relief.
Recommended
Brushed/Brushless DC Motor Drive
The IRFS3006TRL7PP is well-matched to brushed and brushless DC motor drive stages in industrial automation and robotics. In a three-phase inverter, six IRFS3006TRL7PPs (three high-side, three low-side) can drive a 5-10 kW BLDC motor at 48 V bus. The 240 A continuous current supports high-torque peak demands, while the 60 V VDS handles back-EMF spikes from the motor inductance. The HEXFET technology's robust avalanche rating and body-diode dv/dt immunity are particularly valuable in hard-switched PWM at 20-50 kHz, where the intrinsic diode conducts during dead-time intervals.
Recommended
Solar PV / Battery Inverter Switch
The IRFS3006TRL7PP can be used as the low-side switch in solar charge controller and small photovoltaic inverter designs operating at 24-48 V battery bus. Its low RDS(on) of 1.5 mΩ minimizes conduction loss during MPPT buck/boost conversion, improving overall system efficiency. The 60 V VDS provides sufficient headroom for 48 V battery transients under load dump. The D2PAK-7 footprint is large enough to dissipate the energy from occasional short-circuit events, and the avalanche-rated die adds resilience to inductive switching transients common in outdoor PV installations.
Recommended
Recommended Products Summary
Engineering reference data for IRFS3006TRL7PP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFS3006-7PPBF | IRFS7534-7PPBF | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | D2PAK (TO-263), 7-Lead | D2PAK (TO-263), 7-Lead - same | D2PAK (TO-263), 7-Lead - same | D2PAK (TO-263) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 75 V | 600 V |
| Technology | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | CoolMOS CFD7 |
Key Differentiators
- Lowest on-resistance in 60 V D2PAK-7 HEXFET family (vs IRFS7534-7PPBF)
- Genuine Infineon / IR legacy part with broad distributor availability (vs STP75NF75 (STMicroelectronics))
- 7-lead D2PAK with Kelvin source pins for high-di/dt switching (vs Standard 3-lead D2PAK equivalents)
Design Notes
The IRFS3006TRL7PP dissipates 375 W maximum at Tc = 25 °C, but real-world systems limit junction temperature to 125 °C for reliability. Estimated: at 200 A continuous with RDS(on) = 2.1 mΩ, conduction loss alone is ~84 W; thermal resistance RθJC for D2PAK-7 is typically 0.4 °C/W (verify in datasheet), so Tj rise is ~34 °C above the case. Designers must attach the metal tab to a copper spreader of at least 6 square inches or an external heatsink; without this, thermal runaway can occur above 150 A continuous. Add a thermocouple near the tab for production verification.
Use a minimum 2 oz copper pour on the drain tab land to maximize heat spreading. Place gate-drive components within 5 mm of the gate pin to minimize gate-loop inductance; the 7-lead D2PAK includes Kelvin-source pins (1-4) that should be tied to the local source-return of the gate driver for clean switching. Add a 10 kΩ gate-source pull-down resistor to prevent unintended turn-on during power-up, and a small RC snubber (10 Ω + 1 nF) if ringing exceeds 20% of VDS.
Do not exceed 60 V VDS even transiently — avalanche events beyond the rated EAS will destroy the die. Always use a TVS diode or active clamp on inductive loads. The intrinsic body diode has limited reverse-recovery characteristics; for hard-switched bridge topologies above 50 kHz, prefer external Schottky anti-parallel diodes or use synchronous rectification control with proper dead-time. Gate-source voltage must remain below ±20 V absolute maximum to avoid oxide rupture.
Keep the high-current loop (drain-source) area minimized — a 1 cm² loop adds ~10 nH inductance and can produce 100 V spikes at 10 A/ns di/dt. The Kelvin source pins (4) on the 7-lead package are specifically designed to decouple the gate-drive return from the main source current. Solder the tab to a contiguous copper pour with thermal vias to an internal plane; do not rely solely on surface copper for heat dissipation above 100 A continuous.
Compliance Information
RoHS compliant per Infineon product page. AEC-Q100 not qualified for this specific suffix; AEC-Q101 screened variants available on request. Halogen-free per Infineon product family statement.
