IRFS4321TRLPBF vs IRFS52N15DTRLP Comparison
Detailed side-by-side comparison of IRFS4321TRLPBF by Infineon and IRFS52N15DTRLP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS4321TRLPBF | IRFS52N15DTRLP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.73 | $1.62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at Tc=25C | 85 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) Max at VGS=10V | 15 mOhm | β |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-to-Source Voltage (VGS) Max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) Typ | 71 nC | β |
| Total Gate Charge (Qg) Max | 110 nC | β |
| Power Dissipation (PD) at Tc=25C | 350 W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) Max | 0.45 C/W | β |
| Thermal Resistance Junction-to-Case (RΞΈJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263) surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | HEXFET (Planar) |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | β | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | β | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | β | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | β | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | β | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V (typical 3 V) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge in nC] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | β | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | β | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | [DATA_NEEDED: RthJA in C/W] |
| Operating Temperature Range | β | -55 C to +175 C (junction) |
| Pin Count | β | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | β | Yes (matte tin) |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for D2PAK) |