IRFS4321TRLPBF vs IRFS52N15DTRLP 비교
다음의 상세 나란히 비교: IRFS4321TRLPBF 제조: Infineon 및 IRFS52N15DTRLP 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFS4321TRLPBF | IRFS52N15DTRLP |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.73 | $1.62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263) surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | HEXFET (Planar) |
| RoHS 상태 | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V (typical 3 V) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge in nC] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| 동작 온도 범위 | — | -55 C to +175 C (junction) |
| 핀 수 | — | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | — | Yes (matte tin) |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020, typical for D2PAK) |