IRL2910STRLPBF vs IRF1310NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRL2910STRLPBF sa pamamagitan ng Infineon at IRF1310NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRL2910STRLPBF IRF1310NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Infineon/IR) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 55 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ VGS=10V 26 mOhm —
Gate Threshold Voltage VGS(th) typ Logic-level (1V-2V) —
Total Gate Charge (Qg) 93.3 nC 73.3 nC
Power Dissipation @ TA=25C 3.8 W —
Power Dissipation @ TC=25C 200 W —
Packhaging D2PAK (TO-263) Surface Mount D2PAK (TO-263AB)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (TJ) -55C to +175C
Tindminan RoHS Compliant —
Wala sa Halogen Compliant (per GlobalSpec) —
Continuous Drain Current (ID) at TC=25C — 42 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C — 160 W
Power Dissipation (PD) at TA=25C — 3.8 W
Built-in Diode — Yes (intrinsic body diode)
Lead-Free / RoHS — Yes (PBF suffix)
Configuration — Single with built-in diode

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