IRLB4132PBF - 30V 78A N-Channel HEXFET MOSFET TO-220
MPN: IRLB4132PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.32 | $13.20 |
| 100 | $0.95 | $95.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.62 | $620.00 |
IRLB4132PBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals in power-conversion circuits. N-channel MOSFETs such as the IRLB4132PBF sit in the broader hierarchy of discrete semiconductors (MOSFET -> transistor -> semiconductor -> electronic component) and are typically selected for low-side or high-side switching where the drain is tied to the load and the source returns to ground. The "logic-level" gate threshold rating (typically 1V to 2.5V Vgs(th)) means the device turns on fully with a 5V drive, simplifying microcontroller interfaces in UPS, inverter, and motor-drive designs.
Key features include an ultra-low on-resistance of approximately 3.5 mOhm at VGS=10V (and roughly 5 mOhm at VGS=4.5V), avalanche-rated ruggedness, and a 175 C maximum operating junction temperature. The TO-220AB package provides a thermal resistance (junction-to-case) of about 1.05 C/W when properly mounted to a heatsink, enabling sustained high-current switching in space-constrained designs.
The HEXFET cell structure combines a vertical DMOS architecture with a hexagonal cell layout, balancing conduction loss and switching speed. The 30V VDS rating leaves ample headroom for 12V bus applications, while the 78A continuous rating supports high-current inverter stages where traditional MOSFETs would otherwise require paralleling.
Typical applications include uninterruptible power supplies (UPS), DC-AC inverters, low-voltage motor drives, and high-current load switches in industrial and telecom power systems. The part is also commonly used as a synchronous rectifier on the secondary side of 12V buck converters.
Design consideration: at high continuous currents, an appropriately sized heatsink with thermal compound is required to keep junction temperature below 150 C for reliable long-term operation. The TO-220 tab is electrically tied to the drain, so insulating hardware (mica washer or silicone pad) is required when mounting to a grounded heatsink.
This page synthesizes distributor pricing, drop-in alternatives, application notes, and parametric comparisons not found on a single manufacturer datasheet, giving engineers a one-stop reference for sourcing and validating the IRLB4132PBF in production designs.
Drop-in alternatives for IRLB4132PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLB4132PBF (same form factor and footprint) β differing in Technology, Package, Mounting Type, RoHS Status, Transistor Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLB4030PBF
β Drop-Inβ In Stock
$3.1 / Unit
View Datasheet βIRFB3077PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF1405PBF
β Drop-Inβ In Stock
$1.42 / Unit
View Datasheet βIRFB4020PBF
β Drop-Inβ In Stock
$1.38 / Unit
View Datasheet βVBM1303
β Drop-Inπ Reference alternative (not in catalog)
IRLL024ZTRPBF
β Drop-Inβ In Stock
$0.46 / Unit
View Datasheet βIRLB4132PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Transistor Type | N-Channel MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Tc=25C) | 78 A |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V |
| Maximum Junction Temperature | 175 C |
| Operating Temperature Range | -55 C to +175 C |
| Package / Case | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) |
IRLB4132PBF Pin Configuration
| Pin 1 | Gate β MOSFET gate (logic-level, 5V drive compatible) |
| Pin 2 | Drain β MOSFET drain (electrically tied to the metal tab of TO-220AB) |
| Pin 3 | Source β MOSFET source (return path for load) |
Safe Operating Area (TC=25C, VGS=10V, TJ=175C)
Typical Applications
IRLB4132PBF is suitable for 6 applications: Uninterruptible Power Supply (UPS) - Low-Side Switch, DC-AC Inverter Power Stage, 12V High-Current Load Switch, Synchronous Rectifier in 12V Buck Converter, Brushed DC Motor Drive (H-Bridge), Telecom 12V Hot-Swap Controller.
Uninterruptible Power Supply (UPS) - Low-Side Switch
The IRLB4132PBF is explicitly optimized by Infineon for UPS applications per the datasheet description, where it serves as the low-side switching element between the 12V battery bus and the primary of the step-up transformer. Its 78A continuous drain current and 3.5 mOhm RDS(on) at VGS=10V keep conduction loss in a 1 kW UPS stage to a level manageable without forced-air cooling, while the 30V VDS provides ample headroom over a 12V battery even at full charge. Designers should add a TVS or RC snubber across the primary to clamp the inductive kickback within the 30V rating.
Recommended
DC-AC Inverter Power Stage
In a DC-AC inverter below 1 kW, the IRLB4132PBF can be used in a full-bridge or push-pull topology switching a 12V or 24V DC bus at audio or low-kHz PWM frequencies. Its 78A ID rating supports inverter outputs up to roughly 500-800W continuous without paralleling devices. The logic-level gate threshold (1.0-2.5V typical VGS(th)) means a single 5V gate-driver IC can fully enhance the part, eliminating the need for a 10V bootstrap supply and simplifying the BOM.
Recommended
12V High-Current Load Switch
The IRLB4132PBF is well suited as a high-side or low-side load switch for 12V industrial buses, where its 78A rating can directly drive solenoid valves, brushed DC motors, and resistive heating elements. Logic-level gate drive allows direct PWM control from a 5V microcontroller GPIO at up to ~25 kHz before switching losses dominate. A 10 kOhm gate pull-down resistor is recommended to ensure the MOSFET stays off during MCU reset or brown-out conditions.
Recommended
Synchronous Rectifier in 12V Buck Converter
In a 12V-to-low-voltage synchronous buck converter, the IRLB4132PBF can serve as the low-side rectifier MOSFET, replacing a Schottky diode to gain 5-10% efficiency at heavy load. Its 3.5 mOhm RDS(on) and logic-level gate drive make it ideal for the secondary-side synchronous FET driven by a standard buck controller. Designers should ensure the controller's dead-time programming prevents shoot-through at light load, as the low RDS(on) does not limit cross-conduction current.
Recommended
Brushed DC Motor Drive (H-Bridge)
A discrete H-bridge using four IRLB4132PBF devices can deliver up to ~78A continuous to a brushed DC motor in a 12V battery-powered application such as a robotic drive train or power tool. The TO-220AB package with low Rth(j-c) allows each MOSFET to dissipate ~20-30W when mounted to a shared heatsink. Bidirectional PWM speed control at 5-20 kHz is fully supported by the part's logic-level gate and low gate charge.
Recommended
Telecom 12V Hot-Swap Controller
In a 12V telecom hot-swap or eFuse circuit, the IRLB4132PBF serves as the main pass element, with its RDS(on) used as the current-sense element for basic fold-back limiting. Its 78A continuous rating supports -48V-to-12V intermediate bus OR-ing or load-distribution switches. The avalanche rating of the HEXFET cell structure absorbs the inductive transients of inrush events without needing a separate TVS clamp in many designs.
Recommended
Recommended Products Summary
Engineering reference data for IRLB4132PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLB4030PBF | IRFB3077PBF | IRF1405PBF | VBM1303 |
|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Drain-Source Voltage VDS | 30 V | 30 V | 75 V | 55 V | 30 V |
| Continuous Drain Current ID (Tc=25C) | 78 A | 78 A | 75 A | 100 A | 120 A |
| RDS(on) at VGS=10V (typ) | 3.5 mOhm | 3.0 mOhm | 5.6 mOhm (at 75V) | 5.3 mOhm | 3.0 mOhm |
| Gate Threshold VGS(th) | 1.0 - 2.5 V (logic-level) | 1.0 - 2.5 V (logic-level) | 1.0 - 2.5 V (logic-level) | 2.0 - 4.0 V (standard) | 1.0 - 2.5 V (logic-level) |
| Power Dissipation (Tc=25C) | 140 W | 140 W | 200 W | 330 W | 120 W |
| Optimized Application | UPS / Inverter | UPS / Inverter | High-current switching | Automotive / industrial | High-current low-loss |
Key Differentiators
- Explicitly optimized for 5V gate-drive UPS / inverter use (vs IRF1405PBF)
- Lower RDS(on) than higher-voltage drop-in alternatives (vs IRFB3077PBF)
- Proven Infineon HEXFET ruggedness and datasheet support (vs VBM1303)
Design Notes
The TO-220AB package of the IRLB4132PBF has a junction-to-case thermal resistance (Rth(j-c)) of approximately 1.05 C/W. At a 78 A load with 3.5 mOhm RDS(on), conduction loss alone is roughly P = I^2 x R = 78^2 x 0.0035 = 21.3 W. Without a heatsink (Rth(j-a) ~ 62 C/W), junction temperature would rise 21.3 x 62 = 1320 C - clearly impossible. A heatsink with Rth(s-a) below approximately 5 C/W keeps Tj below 150 C at this power level. Always use thermal compound or a thermal pad at the mounting interface.
Although the IRLB4132PBF is a through-hole TO-220AB part, the PCB copper pad connected to drain and source should be a minimum of 50 x 50 mm of 2 oz copper to act as a heat-spreader and reduce the junction-to-ambient thermal resistance. The gate trace should be kept short and routed away from the drain-source switching node to minimize parasitic gate-loop inductance, which can cause ringing and false triggering at high di/dt. A 10 kOhm gate-source pull-down resistor is recommended to keep the MOSFET off during MCU reset.
Three common pitfalls when using the IRLB4132PBF: (1) treating the metal tab as thermally isolated from the drain - it is internally bonded to the drain, so a grounded heatsink will short the drain to ground; use a mica washer or silicone pad. (2) Driving the gate with only 3.3V - the VGS(th) maximum is 2.5V, so a 3.3V rail may not fully enhance the part, causing high RDS(on) and overheating; use a 5V or 10V gate drive. (3) Exceeding the avalanche rating during inductive turn-off - always add a freewheeling diode, RC snubber, or TVS clamp across inductive loads to keep VDS within the 30V rating.
When using the IRLB4132PBF in a switching application above 10 kHz, the source lead inductance creates a negative feedback that slows turn-off and can cause oscillation. Minimize the source-loop area by using a Kelvin connection where the source sense and power source return are separated at the package, or use a gate driver with a true ground-reference. For high-side switching, add a small (10-100 Ohm) gate-series resistor to dampen the gate-drive loop resonance.
Compliance Information
Pb-free (PBF suffix) per Infineon datasheet. Not AEC-Q101 qualified per Infineon datasheet disclaimer: 'this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.' Halogen-free status not explicitly stated in available datasheet - marked unknown.
