IRLL024ZTRPBF - 55V 5A 60mΩ N-Ch MOSFET SOT-223 | Infineon
MPN: IRLL024ZTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.96 | $0.96 |
| 10 | $0.86 | $8.60 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.54 | $540.00 |
| 2,500 | $0.46 | $1,150.00 |
IRLL024ZTRPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (in this case, an N-channel enhancement-mode structure) to modulate current flow between drain and source. HEXFET is a trench-gate technology from International Rectifier (now Infineon) that places the gate electrode inside vertical trenches, dramatically lowering RDS(on) per unit silicon area. Within the broader taxonomy, this part sits at: HEXFET power MOSFET -> power MOSFET -> discrete semiconductor -> power management component.
Key features of the IRLL024ZTRPBF include a logic-level gate drive threshold that allows direct control from 3.3 V or 5 V microcontroller GPIO pins, an operating junction temperature up to 150 °C, fast switching speed, and an improved repetitive avalanche rating. The SOT-223 (TO-261-4) footprint offers three active pins (Gate, Drain, Source) plus a large tab lead that doubles as the drain connection and a thermal pad. Per distributor listings, continuous power dissipation is 1 W at TA=25 °C with the tab soldered to a minimum 1 square-inch copper pour.
Technically, the device uses Infineon's latest-generation HEXFET process that combines extremely low on-resistance per silicon area with optimized gate charge (typical Qg = 7 nC), allowing fast turn-on/turn-off transitions at moderate switching frequencies. The logic-level VGS(th) eliminates the need for a gate-driver IC when driven directly from MCU I/O.
Typical applications include DC load switching in industrial 24 V systems, low-side switches in synchronous buck converters, motor and solenoid drivers up to 5 A, battery protection circuits in 1S-3S Li-ion packs, and replacement of relays with solid-state switches. The wide VDS rating also makes it useful for hot-swap controllers in 12 V and 24 V backplanes.
When designing with the IRLL024ZTRPBF, ensure the tab/lead 4 thermal pad is soldered to at least 1 square inch of copper area on the PCB. Switching inductive loads such as solenoids or motors requires a flyback diode across the load. Verify that the upstream gate signal can both source and sink at least 1 µA to charge and discharge the gate capacitance.
This page synthesizes distributor pricing, drop-in alternatives sourced from Infineon's SOT-223 N-channel MOSFET family, and practical PCB-layout and thermal notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRLL024ZTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLL024ZTRPBF (same form factor and footprint) — differing in Package, Technology, Manufacturer, Mounting Type, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRLL024ZTRPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRLL024ZTRPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRLL024ZPBF
✅ Drop-In📋 Reference alternative (not in catalog)
BSS214NWH6327XTSA1
✅ Drop-In✓ In Stock
$0.15 / Unit
View Datasheet →BSP125H6327XTSA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IRLL024ZTRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Technology | HEXFET Power MOSFET (trench-gate) |
| FET Type | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | 55 V |
| Gate-Source Voltage (VGS) max | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | 7 nC |
| Power Dissipation (PD) at TA=25°C | 1 W |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C |
| Package | SOT-223 (TO-261-4) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited floor life) |
| RoHS Status | Compliant |
IRLL024ZTRPBF Pin Configuration
| Pin 1 | Gate — MOSFET gate input; logic-level drive from 3.3 V or 5 V source |
| Pin 2 | Drain — MOSFET drain; internally connected to tab (pin 4) |
| Pin 3 | Source — MOSFET source; connect to circuit ground |
| Pin 4 | Tab / Drain — Drain connection and primary thermal pad; solder to copper pour |
Safe Operating Area (SOT-223, TC=25°C)
Typical Applications
IRLL024ZTRPBF is suitable for 7 applications: 24V Industrial DC Load Switching, Low-Side Switch in Synchronous Buck Converters, Battery Protection in 1S-3S Li-ion Packs, Solid-State Relay Replacement, LED Driver Low-Side PWM Dimming, Hot-Swap / Inrush Limiting in 12V Backplanes, Small DC Motor and Solenoid Driver.
24V Industrial DC Load Switching
The IRLL024ZTRPBF is well suited for 24 V industrial DC load switching because its 55 V VDS rating provides a comfortable 2× safety margin above 24 V bus transients, and its 5 A continuous ID handles typical relay coils, solenoid valves, and indicator loads. The logic-level VGS(th) of 1.0-2.5 V allows direct drive from a 3.3 V or 5 V PLC output module without an external gate-driver IC. Place a flyback diode across inductive loads such as solenoids; the device's 150 °C TJ max and HEXFET avalanche rating tolerate the inductive kickback. At 5 A the RDS(on) of 60 mΩ causes about 1.5 W conduction loss, requiring the SOT-223 tab to be soldered to at least 1 square inch of copper pour.
Recommended
Low-Side Switch in Synchronous Buck Converters
The IRLL024ZTRPBF works as the low-side switch in low-power synchronous buck converters up to 5 A output. Its low total gate charge (Qg typical 7 nC) keeps switching losses low at frequencies up to 500 kHz, while the low RDS(on) of 60 mΩ at 10 V VGS maintains high efficiency at full load. The logic-level gate threshold allows direct PWM drive from a 3.3 V controller output. In a typical 12 V to 3.3 V / 5 A buck topology, this part pairs with a P-channel or N-channel high-side switch; design trade-off vs dedicated gate-driver ICs is that switching above 500 kHz may require a driver to overcome the input capacitance quickly.
Recommended
Battery Protection in 1S-3S Li-ion Packs
The IRLL024ZTRPBF is a cost-effective choice for low-side battery protection MOSFETs in 1S-3S Li-ion packs (4.2 V to 12.6 V nominal). Its 55 V VDS rating easily covers the maximum charge voltage of a 3S pack (12.6 V), and the 5 A ID handles the typical discharge current of consumer battery packs. Logic-level drive simplifies the BMS controller interface. For high-side protection, an N-channel MOSFET would need a charge pump; a P-channel alternative is typically preferred in that position. Verify the battery management IC can source/sink enough gate current for the 7 nC Qg at the required switching frequency.
Recommended
Solid-State Relay Replacement
The IRLL024ZTRPBF can directly replace electromechanical relays in low-current DC switching applications, eliminating mechanical bounce, contact wear, and audible click. Its 5 A continuous ID covers most signal-relay and small-power-relay loads up to 30 V DC, and the HEXFET process provides fast sub-microsecond switching compared to millisecond relay actuation times. Drive the gate directly from an MCU GPIO at 3.3 V or 5 V logic. For AC loads or high-voltage DC (>30 V), use a dedicated solid-state relay IC; the IRLL024ZTRPBF is not rated for AC line switching without additional isolation and snubber circuitry.
Recommended
LED Driver Low-Side PWM Dimming
The IRLL024ZTRPBF handles low-side PWM dimming of LED strings up to 5 A continuous, including high-brightness automotive LED strips, architectural lighting, and indicator panels. Logic-level gate drive allows direct connection to a 3.3 V microcontroller PWM output, eliminating gate-driver stages. At 1 kHz PWM frequency with 5 nC Qg, switching losses are negligible (well under 10 mW). The SOT-223 package dissipates the 60 mΩ × I² heat load efficiently when the tab is properly soldered. Place a gate-series resistor (10-100 Ω) to slow the switching edge and reduce EMI; add a pull-down resistor (10-100 kΩ) from gate to source to prevent false turn-on during MCU reset.
Recommended
Hot-Swap / Inrush Limiting in 12V Backplanes
The IRLL024ZTRPBF works as an inrush-limiting MOSFET in 12 V hot-swap backplane applications, controlling the rate of capacitor charging when a card is plugged into a live bus. The 55 V VDS provides comfortable margin above 12 V plus transients, and the 5 A continuous ID handles typical card supply currents. The logic-level gate threshold allows direct drive from a hot-swap controller IC. For sustained operation above 3 A, use the SOT-223 with substantial copper thermal relief; the part dissipates approximately I² × RDS(on) watts during normal operation. Pair with a dedicated hot-swap controller IC for current monitoring and fault protection.
Recommended
Small DC Motor and Solenoid Driver
The IRLL024ZTRPBF is a cost-effective low-side driver for small DC motors, solenoid valves, and relays up to 5 A. The HEXFET process delivers fast switching (sub-100 ns) for PWM speed control of brushed DC motors, while the 55 V VDS and 150 °C TJ max handle the inductive flyback of brushed motor windings when paired with a flyback diode. Logic-level gate drive simplifies interface to 3.3 V or 5 V microcontrollers. For bidirectional motor control (H-bridge), use two IRLL024ZTRPBF devices in a low-side configuration plus high-side switches; for single-direction applications, a half-bridge with one IRLL024ZTRPBF and one P-channel MOSFET is common.
Recommended
Recommended Products Summary
Engineering reference data for IRLL024ZTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLL024ZTRPBF (auto-grade) | IRLL024ZPBF | BSS214NWH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SOT-223 | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same |
| FET Type / Polarity | N-Channel enhancement-mode | N-Channel enhancement-mode | N-Channel enhancement-mode | N-Channel enhancement-mode | N-Channel depletion-mode (verify polarity) |
| Gate Threshold VGS(th) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | 1.0 V to 2.5 V (logic-level) | Logic-level (verify exact range) | Depletion-mode (different VGS control) |
Key Differentiators
- Logic-level gate drive from 3.3V / 5V MCU GPIO without gate-driver IC (vs IRFZ44N (standard 10V gate-threshold))
- Lower RDS(on) per mm² silicon area than previous-generation HEXFET (vs IRLL024N (older generation))
- SOT-223 footprint enables smaller PCB layouts than D-PAK alternatives (vs IRLR024N (D-PAK / TO-252))
Design Notes
Estimated: the IRLL024ZTRPBF SOT-223 package dissipates 1 W at TA=25 °C only when the tab (pin 4) is soldered to at least 1 square inch (645 mm²) of copper pour. Without adequate copper, thermal resistance rises and the 5 A continuous current rating cannot be achieved. For applications sustaining >3 A, add thermal vias under the tab to inner copper planes or use a D-PAK/TO-252 alternative such as IRLR024N. Maximum junction temperature is 150 °C; derate linearly above 25 °C ambient.
Place a 10-100 Ω gate-series resistor to limit ringing and slow the switching edge, reducing EMI. Add a 10-100 kΩ gate-to-source pull-down resistor to prevent false turn-on during MCU reset or power-up. The tab (pin 4) must be soldered to copper for both electrical connection to the drain and thermal dissipation; do not rely on pin 2 alone for the drain connection in high-current paths. Keep the gate trace short to minimize parasitic inductance that can cause gate-oscillation in fast-switching applications.
Driving inductive loads such as solenoids, motors, or relay coils requires a flyback diode across the load - omitting the diode causes voltage spikes that exceed the 55 V VDS rating and destroys the MOSFET. Do not exceed VGS of ±16 V; ESD-sensitive gates can be damaged by static discharge during handling. Verify VGS(th) is below the MCU GPIO logic-high level (typically 3.3 V or 5 V) before assuming direct drive is possible. The SOT-223 tab is internally connected to the drain - never assume it is floating.
Estimated: at 5 A continuous load, conduction loss = I² × RDS(on) = 25 × 0.06 = 1.5 W. This already approaches the 1 W package rating at 25 °C ambient without thermal derating. For sustained 5 A operation, either reduce duty cycle, lower the load current, or use a larger package (D-PAK). Switching losses at low PWM frequencies (<10 kHz) are negligible; above 100 kHz, switching loss (estimated 0.5 × VDS × ID × tr × fsw) becomes significant and a gate-driver IC is recommended.
Compliance Information
RoHS compliant per Infineon product page (Pb-free 'PBF' suffix). Standard industrial grade; AEC-Q100 qualified variants available separately under same MPN with auto-grade screening. Halogen-free status not explicitly stated in verified data - marked unknown.
