IRLL024NTRPBF vs IRLL2705TRPBF Comparison
Detailed side-by-side comparison of IRLL024NTRPBF by Infineon and IRLL2705TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL024NTRPBF | IRLL2705TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.22 |
| Polarity | N-Channel | β |
| FET Type | MOSFET, Metal Oxide | N-Channel MOSFET, Metal Oxide |
| Operating Mode | Enhancement Mode | β |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | β |
| Continuous Drain Current (ID) at Ta | 3.1 A | β |
| Pulsed Drain Current (IDM) | 4.4 A | β |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | β |
| Total Gate Charge (Qg) | 10.4 nC | 32 nC |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | β |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | β |
| Maximum Operating Junction Temperature | 175 C | β |
| Package | SOT-223 (4-pin) | SOT-223 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET (IR MOSFET fifth generation) |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at 25 deg C | β | 3.8 A |
| Peak Drain Current (IDM, pulsed) | β | 5.2 A |
| RDS(on) max at VGS=10V | β | 40 mOhm |
| Gate Drive Level | β | Logic-Level |
| Power Dissipation at TA=25 deg C | β | 1 W (Ta), 2.1 W (per LCSC listing) |
| Operating Temperature Range | β | -55 deg C to +175 deg C |
| Dynamic dv/dt Rating | β | Yes |
| Lead-Free | β | Yes (PBF suffix) |