IRLL024NTRPBF vs IRLL2705TRPBF 比較
詳細並排比較 IRLL024NTRPBF 由 Infineon 與 IRLL2705TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLL024NTRPBF | IRLL2705TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | N-Channel MOSFET, Metal Oxide |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | 32 nC |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | — |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封裝 | SOT-223 (4-pin) | SOT-223 |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET (IR MOSFET fifth generation) |
| RoHS 狀態 | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 deg C | — | 3.8 A |
| Peak Drain Current (IDM, pulsed) | — | 5.2 A |
| RDS(on) max at VGS=10V | — | 40 mOhm |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation at TA=25 deg C | — | 1 W (Ta), 2.1 W (per LCSC listing) |
| 工作溫度範圍 | — | -55 deg C to +175 deg C |
| Dynamic dv/dt Rating | — | Yes |
| Lead-Free | — | Yes (PBF suffix) |