BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon
MPN: BSS214NWH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.38 | $3.80 |
| 100 | $0.3 | $30.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.15 | $450.00 |
Drop-in alternatives for BSS214NWH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSS214NWH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 |
| Series | OptiMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 20 V |
| Continuous Drain Current (Id) @ 25C | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | 500 mW |
| Package | PG-SOT323 (SOT-323-3) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSS214NWH6327XTSA1 Pin Configuration
| Pin 1 | Gate — Gate control input (logic-level compatible) |
| Pin 2 | Source — Source terminal (connected to GND in low-side switching) |
| Pin 3 | Drain — Drain terminal (load connection in low-side switching) |
Safe Operating Area (SOT-323)
Typical Applications
BSS214NWH6327XTSA1 is suitable for 7 applications: DC-DC Converter Synchronous Rectifier, Load Switch in Portable Electronics, Automotive Body Electronics (AEC-Q101), LED Backlight Dimming Switch, USB Power-Path Management, Industrial Sensor Power Switching, IoT Battery Power-Path Selector.
DC-DC Converter Synchronous Rectifier
The BSS214NWH6327XTSA1 is well-suited as the low-side synchronous rectifier in sub-2 A buck converters for portable and IoT devices. Its 250 mOhm Rds(on) at Vgs=4.5 V keeps conduction losses below 100 mW at 1 A load, while the small Qg and Qgd figures enable sub-20 ns switching transitions at 1 MHz. Place the part on the low-side return path with a 10 V gate drive from the controller's boot strap. Unlike Schottky diode replacements, the synchronous MOSFET eliminates forward-voltage drop and improves light-load efficiency; trade-off is the need for dead-time control to prevent shoot-through.
Recommended
Load Switch in Portable Electronics
The BSS214NWH6327XTSA1's logic-level gate threshold and SOT-323 footprint make it a textbook load-switch for power-rail gating in smartphones, wearables, and tablets. Connect the gate directly to a 1.8 V or 3.3 V GPIO to control a downstream 5 V rail at up to 1.5 A. The 20 V VDS comfortably exceeds 5 V and 12 V rails with transient margin. Designers should add a 100 kohm gate pull-down resistor to hold the switch off during MCU reset, and consider a TVS on the load side if hot-plug events are expected. Compared to a P-channel load switch, this N-channel design lowers Rds(on) by ~3x at the same die size.
Recommended
Automotive Body Electronics (AEC-Q101)
AEC-Q101 qualification makes the BSS214NWH6327XTSA1 suitable for 12 V automotive subsystems including interior lighting, mirror control, and seat-adjustment motors. The 20 V VDS handles 12 V battery plus transient spikes up to the ISO 7637-2 load-dump profile when paired with a TVS clamp. The SOT-323 package fits behind the rear-view mirror housing where board space is tight. Engineers should derate continuous current to 50% of datasheet maximum and verify junction temperature stays below 150C at worst-case ambient.
Recommended
LED Backlight Dimming Switch
The BSS214NWH6327XTSA1 operates at audio-frequency PWM (200 Hz to 20 kHz) to dim LED strings in TFT backlights or indicator clusters. The fast rise/fall times and low gate charge keep the PWM transition region narrow, preserving color accuracy even at 1% duty cycle. Place the part in the low-side return path and drive the gate directly from a microcontroller timer channel. Verify that the LED string voltage plus any inductive kick stays below the 20 V VDS rating with adequate derating at high temperature.
Recommended
USB Power-Path Management
In USB 2.0/3.0 power-path switches and OTG boost converters, the BSS214NWH6327XTSA1 can serve as the high-side or low-side switch element when paired with a charge controller. The 1.5 A rating covers USB Type-A 500 mA downstream and most BC1.2 charging modes. Place the MOSFET between the system 5 V rail and the VBUS pin, with the gate controlled by the charge-pump or controller's enable output. Add a TVS diode for ESD protection at the VBUS connector.
Recommended
Industrial Sensor Power Switching
Industrial 4-20 mA loop-powered sensors and 24 V proximity switches benefit from the BSS214NWH6327XTSA1 as a low-side enable element, but only when system voltage stays below 20 V. For 24 V nominal industrial rails, select a 30 V or 40 V alternative from the same OptiMOS family. The SOT-323 package supports reflow soldering in fully automated SMT lines. Add a 10 kohm gate pull-down to prevent floating-gate turn-on during controller brown-out events.
Recommended
IoT Battery Power-Path Selector
In coin-cell or Li-ion powered IoT end nodes, the BSS214NWH6327XTSA1 can act as the OR-ing FET between a battery and a USB charger input, or as the load-disconnect switch during deep sleep. The logic-level gate drive allows direct GPIO control from an ultra-low-power MCU. At 1.5 A rating, the part handles peak radio transmission currents for LoRa, BLE, or Wi-Fi modules. Use a 100 kohm pull-down to keep the FET off during MCU reset and minimize quiescent leakage to sub-1 uA.
Recommended
Recommended Products Summary
Engineering reference data for BSS214NWH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS214NWL6327 | BSL606SNH6327XTSA1 | BSP125H6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT323 | PG-SOT323 | PG-SOT323 | PG-SOT323 | PG-SOT323 |
| VDS Max | 20 V | 20 V | 60 V | 600 V (depletion mode) | 60 V (P-channel) |
| Continuous Id @ 25C | 1.5 A | 1.5 A | 0.30 A (typical) | [DATA_NEEDED] | [DATA_NEEDED] |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | 250 mOhm | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel (depletion) | P-Channel |
| Automotive Qualified | Yes (AEC-Q101) | No (commercial) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Automotive-grade qualification in SOT-323 footprint (vs BSS214NWL6327)
- Lower on-resistance per unit silicon area in 20 V class (vs Legacy BSS138 (SOT-23))
- Logic-level gate drive compatible with 1.8V/3.3V MCUs (vs BSL606SNH6327XTSA1 (60V SOT-323))
Design Notes
The SOT-323 package has a typical thermal resistance (RthJA) of approximately 200 C/W on a minimal JEDEC test board, meaning the 500 mW power dissipation at 25C ambient translates to a 100C junction temperature rise. Estimated: at Id=1 A continuous and Rds(on)=250 mOhm, conduction loss is 250 mW, yielding Tj rise of 50C above ambient. For continuous loads above 0.5 A, attach a copper pad heatsink of at least 50 mm^2 on the drain pad (pin 3) to reduce RthJA and prevent thermal shutdown.
Place the gate drive trace on the bottom layer with a width of at least 0.2 mm to minimize parasitic inductance. Keep the gate loop area (gate-driver-to-gate-to-source-pin-back-to-driver) under 5 mm^2 to avoid ringing that can cause partial turn-on. Add a 100 kohm gate-to-source pull-down resistor to hold the MOSFET off during MCU reset or power-up glitches. The drain and source traces should be sized to carry 1.5 A continuous with < 30 C copper rise (approximately 1 mm width per amp on 1 oz copper).
Do not exceed the 20 V VDS rating under any transient condition including inductive kickback. For switching inductive loads (relays, solenoids, motors), always place a flyback diode or TVS clamp directly across the load before the drain pin. Note that the gate is ESD-sensitive (HBM Class 1C typical); handle the part in ESD-safe environments and avoid touching pins during assembly. Verify Vgs(th) on first articles if using the part at the low end of the logic-level range (1.8 V GPIO drive).
Compliance Information
AEC-Q101 (automotive grade MOSFET equivalent) qualification confirmed by Infineon product family datasheet and Arrow.com distributor listing. RoHS compliance per DigiKey and Mouser product listings. Halogen-free status not explicitly stated in web data.
