IRLR024NTRPBF vs IRLL024NTRPBF 比較
詳細並排比較 IRLR024NTRPBF 由 Infineon 與 IRLL024NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR024NTRPBF | IRLL024NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | MOSFET, Metal Oxide |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 10.4 nC |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| 工作溫度範圍 | -55 C to +175 C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | TO-252AA (DPAK) | SOT-223 (4-pin) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET Power MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Pulsed Drain Current (IDM) | — | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | — | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |
| RoHS 狀態 | — | Compliant |