IRLR2705TRLPBF vs IRLR3410TRPBF Comparison
Detailed side-by-side comparison of IRLR2705TRLPBF by Infineon and IRLR3410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR2705TRLPBF | IRLR3410TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.81 |
| Transistor Type | N-Channel MOSFET (HexFET) | β |
| Drain-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 28 A | β |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Power Dissipation (PD) at TC=25C | 68 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C (junction) |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET, 5th generation) |
| Configuration | Single N-Channel | β |
| MSL Level | 1 (unlimited floor life at <30C / 85% RH) | 1 (unlimited floor life at <30C/85% RH) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 100 V |
| Continuous Drain Current (Id) at Tc=25C | β | 17 A |
| Power Dissipation (Pd) at Tc=25C | β | 79 W |
| On-Resistance RDS(on) max | β | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | β | Logic-level (drive ~4.5V) |
| Total Gate Charge (Qg) | β | 22.7 nC |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Drain Tab Connection | β | Tab electrically tied to Drain |
| Polarity | β | N-Channel enhancement mode |