IRLR3410TRPBF - 100V 17A N-Channel HEXFET MOSFET DPAK | Infineon
MPN: IRLR3410TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.33 | $1.33 |
| 10 | $1.2 | $12.00 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.81 | $810.00 |
Drop-in alternatives for IRLR3410TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLR3410TRRPBF
β Drop-Inβ In Stock
$0.58 / Unit
View Datasheet βIRFR3410
β Drop-Inπ Reference alternative (not in catalog)
IRFR3710ZTRPBF
β Drop-Inβ In Stock
$0.42 / Unit
View Datasheet βIRLR3110Z
β Drop-Inπ Reference alternative (not in catalog)
VBE1101M
β Drop-Inπ Reference alternative (not in catalog)
IRFR24N15D
β Drop-Inπ Reference alternative (not in catalog)
IRLR3410TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) at Tc=25C | 17 A |
| Power Dissipation (Pd) at Tc=25C | 79 W |
| On-Resistance RDS(on) max | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) |
| Total Gate Charge (Qg) | 22.7 nC |
| Package | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix) |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) |
| Drain Tab Connection | Tab electrically tied to Drain |
| Polarity | N-Channel enhancement mode |
IRLR3410TRPBF Pin Configuration
| Pin 1 | Gate β MOSFET gate drive input (logic-level, ~4.5V Vgs(th)) |
| Pin 2 | Drain β MOSFET drain (also connected to the metal mounting tab) |
| Pin 3 | Source β MOSFET source (return path for gate drive and load) |
Safe Operating Area (DC)
Typical Applications
IRLR3410TRPBF is suitable for 7 applications: 24V/48V Telecom DC-DC Converter Primary Switch, Low-Voltage Brushless DC Motor Drive, Synchronous Rectifier Replacement for Schottky Diodes, Solenoid and Relay Driver Switch, Hot-Swap and Inrush Current Limiter, Automotive 12V/24V Load Switch, Battery Pack Discharge/Charge Control.
24V/48V Telecom DC-DC Converter Primary Switch
The IRLR3410TRPBF serves as the primary-side high-side or low-side switch in isolated 24V or 48V-input telecom DC-DC converters. Its 100V Vdss provides ample margin above 48V nominal bus voltage including transient spikes, while 105 mOhm RDS(on) keeps conduction losses manageable at 5-10A continuous load. The logic-level 4.5V Vgs(th) allows direct gate drive from a PWM controller running on 5V bias. At 200 kHz switching frequency with 5A load, total switching plus conduction loss per device is approximately 1.5W, well within the 79W DPAK dissipation rating.
Recommended
Low-Voltage Brushless DC Motor Drive
The IRLR3410TRPBF can be used as the low-side FET in a 24V brushless DC (BLDC) motor drive H-bridge. With 17A continuous current rating and logic-level gate drive, it pairs well with 5V microcontrollers or dedicated motor-driver ICs. The 22.7 nC total gate charge enables PWM switching frequencies up to 50 kHz for smooth torque control. For three-phase BLDC drives, six IRLR3410TRPBF devices form a complete inverter. The DPAK package allows compact PCB integration with the tab soldered to copper pour for thermal management up to 30W continuous motor power.
Recommended
Synchronous Rectifier Replacement for Schottky Diodes
In 12V-to-5V or 24V-to-12V buck converters, replacing the Schottky rectifier with the IRLR3410TRPBF as a synchronous rectifier delivers 2-4% efficiency improvement at loads above 3A. The 105 mOhm RDS(on) is lower than equivalent Schottky forward voltage drop at moderate currents, while the N-channel structure avoids reverse-recovery charge losses. Designers must implement proper dead-time control (typically 50-200 ns) to prevent shoot-through. The DPAK package handles the resulting dissipation comfortably when mounted on adequate copper area.
Recommended
Solenoid and Relay Driver Switch
The IRLR3410TRPBF is well suited as a low-side driver switch for 24V solenoids, relays, and valve coils in industrial automation systems. Its 17A rating handles inrush currents typical of inductive loads, while the 100V Vdss provides comfortable margin against flyback transients when used with a freewheeling diode. Logic-level gate drive enables direct interface with PLC outputs or 5V microcontroller GPIO. The DPAK package offers sufficient thermal dissipation for continuous-duty solenoid applications up to 5A average current.
Recommended
Hot-Swap and Inrush Current Limiter
The IRLR3410TRPBF operates as an inrush current limiter in 24V or 48V hot-swap controller circuits, where it protects backplane connectors and bulk capacitors from surge currents during board insertion. By driving the gate with a controlled ramp via RC network or hot-swap controller IC, the IRLR3410TRPBF gradually turns on and limits di/dt to safe levels. Its 17A continuous rating handles full steady-state load after turn-on, and 100V Vdss protects against transient backplane voltage spikes during hot-plug events.
Recommended
Automotive 12V/24V Load Switch
The IRLR3410TRPBF functions as a high-side or low-side load switch for automotive 12V or 24V battery applications, including lighting, HVAC blower motors, and accessory controls. While the standard part is commercial grade, its -55C to +175C junction temperature range and robust avalanche rating suit harsh under-hood environments. The DPAK package is widely accepted in automotive PCB designs. For AEC-Q101 qualified variants, the IRFR3410 in I-Pak or similar automotive-grade parts should be considered. The logic-level gate enables direct PWM dimming from 5V microcontrollers.
Recommended
Battery Pack Discharge/Charge Control
The IRLR3410TRPBF serves as the low-side protection FET in multi-cell lithium battery packs (10S-20S configurations up to 72V nominal). During discharge, it carries continuous current up to 17A; during charge, it blocks reverse current. The 100V Vdss accommodates fully-charged 20S Li-ion packs (~84V) plus transient margin. Logic-level gate drive simplifies interface with battery management system (BMS) controllers. The DPAK package's low thermal resistance keeps junction temperature low even at 10A continuous discharge in space-constrained battery pack designs.
Recommended
Recommended Products Summary
Engineering reference data for IRLR3410TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLR3410TRRPBF | IRFR3410 | IRFR3710Z | IRLR3110Z | VBE1101M | IRFR24N15D |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 150 V |
| Continuous Drain Current (Id) | 17 A | 17 A | 17 A | 46 A | 42 A | 17 A | 24 A |
| On-Resistance RDS(on) max | 105 mOhm | 105 mOhm | 105 mOhm | 21 mOhm | 14 mOhm | 100 mOhm | 70 mOhm |
| Gate Drive Level | Logic-level (~4.5V) | Logic-level (~4.5V) | Logic-level (~4.5V) | Standard (10V) | Standard (10V) | Logic-level (10V) | Standard (10V) |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC | 22.7 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc=25C) | 79 W | 79 W | 79 W | 90 W | 90 W | [DATA_NEEDED] | 140 W |
| Automotive Grade (AEC-Q101) | No (commercial) | No | No | No | No | No | No |
Key Differentiators
- Logic-level gate drive enables direct 5V MCU interface (vs IRFR3710Z)
- Lowest cost in 100V logic-level DPAK class (vs IRLR3110Z)
- Wide distributor availability and active production (vs VBE1101M)
- Sufficient 100V rating without over-spec cost (vs IRFR24N15D)
Design Notes
Estimated: At 17A continuous drain current and 100 mOhm RDS(on), conduction loss alone is approximately 29W. Mounting the DPAK tab on a minimum 1 square inch (645 mm^2) of 2 oz copper on a standard FR-4 PCB yields a theta_JA of roughly 50 C/W, resulting in a 1450C junction temperature rise at 29W - which is unacceptable. Practical continuous load is limited to 8-10A without a heatsink or forced air cooling. For 17A continuous operation, use an active heatsink or thermal via array to spread heat into inner PCB layers.
The DPAK tab is electrically connected to the drain terminal. When using the IRLR3410TRPBF as a low-side switch, the tab is at ground potential and can be safely connected to a large ground copper pour for both electrical return and thermal dissipation. When using as a high-side switch, the tab floats at switching node voltage and must be isolated with thermal pad insulators, or use a low-side topology to avoid isolation complexity.
Despite the logic-level gate rating, driving the IRLR3410TRPBF with Vgs above 12V can damage the gate oxide. Use a 10V zener or TVS diode across gate-source when the drive source could exceed 12V during transients. Also, the device has no integrated gate resistor - adding an external 10-100 ohm gate resistor suppresses ringing and limits peak gate current during fast switching transitions.
Keep the gate drive loop (gate-driver output -> gate -> source -> gate-driver ground) as small as physically possible to minimize parasitic inductance. A gate-loop inductance of just 10 nH can create 5V ringing on Vgs at 1A/ns switching edge, potentially exceeding the +/-20V Vgs maximum. Place the gate driver within 5mm of the MOSFET pins, and use a ground plane directly under the driver-MOSFET loop.
In bridge topologies (half-bridge or full-bridge), the IRLR3410TRPBF's body diode acts as a freewheeling path during dead-time. With trr in the tens of nanoseconds, the body diode is adequate for hard-switching applications below 100 kHz. For higher frequencies, add external Schottky diodes across drain-source to reduce dead-time loss and prevent body-diode reverse-recovery induced shoot-through.
Compliance Information
RoHS compliant per PBF suffix in part number. Lead-free matte-tin plating. MSL 1 rating. Not AEC-Q100/AEC-Q101 qualified - for automotive applications use IRFR3410-Q1 or similar automotive-graded variants. REACH compliant per Infineon standard declarations. Conflict minerals reporting compliant per Infineon CMRT filings.
