IRLR2705TRLPBF - 55V N-Channel HexFET MOSFET, DPAK | Infineon
MPN: IRLR2705TRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.1 | $1.10 |
| 10 | $0.95 | $9.50 |
| 100 | $0.72 | $72.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.42 | $420.00 |
| 3,000 | $0.32 | $960.00 |
Drop-in alternatives for IRLR2705TRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRLR2705TRPBF
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →IRLR2905TRPBF
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IRFR1205TRPBF
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IRFR5305TRPBF
✅ Drop-In✓ In Stock
$0.32 / Unit
View Datasheet →IRLR3410TRPBF
✅ Drop-In✓ In Stock
$0.81 / Unit
View Datasheet →VBE1638
✅ Drop-In📋 Reference alternative (not in catalog)
IRLR2705TRLPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC=25C | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | 20 V |
| Power Dissipation (PD) at TC=25C | 68 W |
| Operating Temperature Range | -55C to +175C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant |
| Technology | IR MOSFET (HEXFET, 5th generation) |
| Configuration | Single N-Channel |
| MSL Level | 1 (unlimited floor life at <30C / 85% RH) |
IRLR2705TRLPBF Pin Configuration
| Pin 1 | GATE — Gate control input; logic-level compatible |
| Pin 2 | DRAIN — Drain terminal (internally bonded to back tab) |
| Pin 3 | SOURCE — Source terminal |
| Pin TAB | DRAIN (TAB) — Exposed drain tab; serves as main thermal dissipation path and electrical drain connection |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRLR2705TRLPBF is suitable for 7 applications: DC-DC Buck/Boost Converters, Brushed DC Motor Drive, Battery Protection and Load Switching, Solenoid and Relay Driver, Automotive 12V Auxiliary Loads, Power OR-ing and Redundant Supplies, Uninterruptible Power Supply (UPS) Switch.
DC-DC Buck/Boost Converters
The IRLR2705TRLPBF fits high-efficiency synchronous DC-DC converter low-side and main switch positions because of its 40 mOhm RDS(on) at VGS=10V, 55V VDS rating that tolerates 24V industrial bus transients, and logic-level gate threshold that allows direct 3.3V or 5V PWM control. Placed on the converter's switching node with a Schottky freewheeling diode and 100 nF ceramic bypass across the drain tab, the part achieves typical efficiencies above 92% at 5A load. Compared with a switching regulator controller IC, a discrete HEXFET is preferable when the load demands high peak current beyond integrated FET ratings or when thermal headroom is critical.
Recommended
Brushed DC Motor Drive
In brushed DC motor H-bridge designs, the IRLR2705TRLPBF is well-suited as a low-side or high-side switch because its 55V breakdown easily absorbs inductive back-EMF spikes from 12V and 24V motors, while the 28A continuous rating covers motors in the 100W to 300W class. Driven directly from a 3.3V microcontroller PWM output via a 100 Ohm gate resistor, the device achieves clean switching with sub-microsecond rise/fall times. The DPAK package's exposed drain tab also serves as a heatsink for sustained motor stall-current transients, an advantage over SOT-23 MOSFETs that lack thermal mass.
Recommended
Battery Protection and Load Switching
In 12V lead-acid or multi-cell Li-ion battery packs, the IRLR2705TRLPBF serves as a low-side load-disconnect switch with its 40 mOhm RDS(on) keeping conduction loss below 200 mW at 5A continuous load. The 55V VDS rating provides generous headroom over 13.8V automotive charge voltages and inductive transients from solenoids or motors. Logic-level gate drive means an integrated battery-management IC can drive the gate directly without a charge pump, simplifying the BOM. The DPAK package also handles short-circuit inrush events that would damage smaller SOT-23 MOSFETs.
Recommended
Solenoid and Relay Driver
For driving 12V or 24V solenoids, latching relays, and valve coils, the IRLR2705TRLPBF offers a robust low-side switch with 28A peak current capability and 55V avalanche rating that absorbs the inductive kickback when the coil de-energizes. The logic-level gate allows direct control from an automotive or industrial microcontroller GPIO without an intermediate driver stage. Adding a flyback diode across the coil further reduces switch stress. The DPAK's thermal performance enables continuous solenoid hold currents up to several amps without overheating.
Recommended
Automotive 12V Auxiliary Loads
The IRLR2705TRLPBF is well-matched to automotive 12V auxiliary load switching such as lighting drivers, seat heaters, and accessory power outlets because its 55V VDS comfortably exceeds ISO 7637-2 transient peaks (load dump up to 35V), while the 28A rating supports high-current halogen or LED lamp arrays. Logic-level gate drive interfaces directly with automotive microcontrollers. The -55C to +175C operating junction temperature covers under-hood environments, and the lead-free PBF finish meets automotive RoHS requirements.
Recommended
Power OR-ing and Redundant Supplies
In redundant 12V or 24V supply OR-ing circuits, two IRLR2705TRLPBF MOSFETs can be back-to-back configured as ideal diodes with source-to-drain orientation, replacing Schottky diodes to reduce forward drop from 0.4V to roughly 40 mV at 10A. The 55V rating covers 24V industrial rails with margin, and the logic-level gate allows simple MOSFET-driver ICs to control turn-on and turn-off sequencing. This topology is common in telecom and server applications where efficiency and heat dissipation in the OR-ing path are critical.
Recommended
Uninterruptible Power Supply (UPS) Switch
Inside a small UPS module, the IRLR2705TRLPBF serves as the transfer switch between mains and battery paths, leveraging its 28A current rating to carry typical 300W to 500W loads. The logic-level gate enables direct control from a UPS controller MCU. The 55V breakdown withstands both 12V and 24V battery configurations. The DPAK package's drain tab dissipates the brief but high inrush current when switching from battery to mains, with no need for an additional heatsink at typical load levels.
Recommended
Recommended Products Summary
Engineering reference data for IRLR2705TRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLR2705TRPBF | IRLR2905TRPBF | IRFR1205TRPBF | IRFR5305TRPBF | IRLR3410TRPBF | VBE1638 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) max | 55 V | 55 V | 55 V | 55 V | 55 V | 100 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 28 A | 28 A | 42 A | 30 A | 31 A | 39 A | [DATA_NEEDED] |
| RDS(on) max at VGS=10V | 40 mOhm | 40 mOhm | 27 mOhm | 27 mOhm | 65 mOhm | 45 mOhm | [DATA_NEEDED] |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | 1.0 V to 2.0 V | 1.0 V to 2.0 V | 1.0 V to 2.0 V | 1.0 V to 2.0 V | 1.0 V to 2.0 V | [DATA_NEEDED] |
| Technology | HEXFET 5th-gen | HEXFET 5th-gen | HEXFET | HEXFET | HEXFET | HEXFET | Trench |
| Unit Price (qty 100, USD) | 0.72 | 0.72 | 0.85 | 0.68 | 0.90 | 0.95 | [DATA_NEEDED] |
Key Differentiators
- Higher continuous current capability than IRFR1205TRPBF at comparable VDS (vs IRFR1205TRPBF)
- Standard 55V rating matches 24V industrial bus transients (vs IRLR3410TRPBF)
- Logic-level gate threshold enables direct MCU drive (vs VBE1638)
Design Notes
Estimated: At continuous 10A load with RDS(on)=40 mOhm, conduction loss is approximately 4W. With the DPAK drain tab soldered to 1 square inch of 2oz copper, junction-to-ambient thermal resistance is around 50 C/W, yielding a 50C junction rise above ambient. For sustained loads above 8A, expand the drain copper pour to at least 2 to 3 square inches, or attach a clip-on heatsink to keep junction temperature below 125C for long-term reliability.
Place the gate drive trace within 10 mm of pin 1 (gate) to minimize gate-loop inductance. Use a 100 nF ceramic bypass capacitor across drain-to-source as close to the package as possible to suppress VDS ringing from parasitic inductance. The drain tab must be soldered to a continuous copper pour with multiple thermal vias to the opposite PCB layer for heat spreading. Avoid routing signal traces under the drain tab to prevent coupling noise into sensitive analog paths.
Three frequent errors when using DPAK MOSFETs: (1) insufficient copper area leading to thermal runaway; (2) gate-source resistor omitted, allowing high-frequency ringing and false turn-on from Miller coupling through Cgd; (3) reverse-orientation soldering that shorts the source tab to drain. Always add a 10 Ohm to 100 Ohm resistor between gate and source, and visually verify pin 1 is the gate before reflow. Static handling: the IRLR2705TRLPBF is ESD-sensitive at the gate pin; observe standard JEDEC JESD625-A handling protocols during assembly.
Compliance Information
Lead-Free PBF suffix confirms RoHS compliance per Infineon product page. Not AEC-Q100 qualified; for automotive applications requiring full qualification consider AEC-Q100-grade Infineon parts or perform additional qualification testing. Halogen-free status not explicitly stated in the verified web data.
