IRLR2905TRPBF vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IRLR2905TRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR2905TRPBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.32 |
| FET Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at Tc=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Gate Charge (Qg) | 32 nC | β |
| Power Dissipation (PD) at Tc=25C | 110 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Gate Drive | Logic-level compatible | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| Continuous Drain Current (ID) at TC=25C | β | 31 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | -2 V to -4 V |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | β | 110 W |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| Operating Temperature Range | β | -55 C to +175 C |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | β | Yes (PBF suffix) |