IRLR7843TRPBF vs BSC016N06NSATMA1 Comparison
Detailed side-by-side comparison of IRLR7843TRPBF by Infineon and BSC016N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR7843TRPBF | BSC016N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.65 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | β |
| Power Dissipation (Pd) @ Tc=25C | 140 W | β |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | β |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | 34 nC | 71 nC |
| Gate-to-Source Voltage Max | Β±20 V | β |
| Avalanche Energy (Eas) | Fully characterized | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +150 Β°C |
| Package | TO-252AA (DPAK) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOSβ’ 5 |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| Manufacturer | β | Infineon Technologies |
| Product Series | β | OptiMOSβ’ 5 60V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, TA) | β | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.6 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 139 W |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant |
| Gate Drive (recommended) | β | 10 V |