IRLR7843TRPBF vs IRLR3636TRPBF Comparison
Detailed side-by-side comparison of IRLR7843TRPBF by Infineon and IRLR3636TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR7843TRPBF | IRLR3636TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $2.38 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | β |
| Power Dissipation (Pd) @ Tc=25C | 140 W | β |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | β |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | 34 nC | β |
| Gate-to-Source Voltage Max | Β±20 V | β |
| Avalanche Energy (Eas) | Fully characterized | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET | IR HEXFET / IR MOSFET |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| FET Type | β | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (V_DSS) | β | 60 V |
| Continuous Drain Current (I_D) at T_C = 25C | β | 50 A |
| Continuous Drain Current (I_D) at T_C = 100C | β | [DATA_NEEDED: I_D at 100C] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum R_DS(on) at V_GS = 10V | β | 6.8 mOhm |
| Typical R_DS(on) at V_GS = 10V | β | 5.4 mOhm |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) range] |
| Total Gate Charge (Q_G) | β | 33 nC |
| Maximum Power Dissition (P_D) at T_C = 25C | β | 143 W |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes (PBF suffix) |