IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon
MPN: IRLS3036TRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.85 | $185.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.39 | $1,390.00 |
IRLS3036TRLPBF Overview
What is a HEXFET power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages with low conduction loss. HEXFET is Infineon (formerly International Rectifier) brand name for its planar/HEXFET cell geometry, and the 'IR' family prefix denotes parts optimized for low gate charge and logic-level drive. Within the broader taxonomy this part sits as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power transistor -> semiconductor device.
Key features of the IRLS3036TRLPBF include an ultra-low typical Rds(on) of 1.9 mOhm, total gate charge (Qg) of 91 nC typical, logic-level Vgs(th) operation, integrated body diode for synchronous rectification, and enhanced dv/dt ruggedness for hard-switched topologies. The D2PAK package provides a low thermal resistance path from die to PCB, enabling high continuous current without external heatsinking in many designs.
Architecturally, the device uses a HEXFET cell structure with a planar DMOS process, a logic-level gate, and a robust avalanche-rated body diode. This combination delivers an excellent figure-of-merit (FOM = Rds(on) x Qg) for high-frequency synchronous-rectification and motor-drive applications where both switching loss and conduction loss matter.
Typical applications include DC motor drives, high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), high-speed power switching, and hard-switched high-frequency circuits in industrial and automotive environments. The wide safe-operating area (SOA) and avalanche rating also suit battery protection and OR-ing functions.
When designing with this part, pay close attention to PCB layout to minimize parasitic source inductance, use low-impedance gate-drive circuitry, and ensure the heatsink or copper-pour area is sized for the worst-case continuous dissipation. Proper gate-drive voltage (10 V recommended) and adequate input/output capacitance on the gate are critical to avoid shoot-through and ensure clean switching transitions.
This page synthesizes distributor pricing as of 2026-09-15, drop-in HEXFET alternatives in the same D2PAK footprint, and practical design notes not consolidated in the manufacturer datasheet.
Drop-in alternatives for IRLS3036TRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLS3036TRLPBF (same form factor and footprint) β differing in Package, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature, Mounting Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
AUIRLS3036TRL
β Drop-Inπ Reference alternative (not in catalog)
IRLS3036PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFB3207ZPBF
β Drop-Inβ In Stock
$1.62 / Unit
View Datasheet βIRFB4020PBF
β Drop-Inβ In Stock
$1.38 / Unit
View Datasheet βIRF4905LPBF
β Drop-Inβ In Stock
$0.98 / Unit
View Datasheet βIRF1310NSTRLPBF
β Drop-Inβ In Stock
$0.84 / Unit
View Datasheet βIRLS3036TRLPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Technology | IR HEXFET (planar DMOS) |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) at Tc=25C | 270 A |
| Continuous Drain Current (Id) at Tc=100C | 195 A |
| Pulsed Drain Current (Idm) | 1100 A |
| Rds(on) max @ Vgs=10V | 1.9 mOhm |
| Total Gate Charge (Qg) typ | 91 nC |
| Power Dissipation (Pd) at Tc=25C | 380 W |
| Operating Temperature Range | -55C to +175C |
| Package | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
| Integrated Body Diode | Yes (avalanche rated) |
IRLS3036TRLPBF Pin Configuration
| Pin 1 | Gate β Gate drive input (logic-level, 10V recommended for full enhancement) |
| Pin 2 | Drain β Drain terminal (electrically connected to the metal tab / exposed pad) |
| Pin 3 | Source β Source terminal (return path for gate-drive and load current) |
| Pin Tab | Drain (Tab) β Metal tab / exposed thermal pad; internally connected to Drain (pin 2); primary thermal dissipation path |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IRLS3036TRLPBF is suitable for 6 applications: Synchronous Rectification in SMPS, DC Motor Drive (H-Bridge Low-Side), Uninterruptible Power Supply (UPS) Battery Switch, Hot-Swap / eFuse Controller for 24V Industrial Rails, High-Power LED Driver / Solenoid Switch, Battery Protection and OR-ing in Telecom Systems.
Synchronous Rectification in SMPS
The IRLS3036TRLPBF fits low-side synchronous-rectifier positions in 24 V and 48 V SMPS secondary stages where its 60 V Vdss comfortably covers transient ringing, the 1.9 mOhm Rds(on) at Vgs=10 V drives conduction loss below 1% at 30 A output, and the 91 nC total gate charge keeps switching loss manageable at 200-500 kHz. Placed on the secondary-side heatsink with a low-inductance D2PAK copper pour, it replaces Schottky diodes to deliver 1-3% efficiency gains. The logic-level gate threshold allows direct drive from a UCC24612 or similar SR controller, simplifying the design. Trade-off: the integrated body diode has higher reverse-recovery charge than a Schottky, so dead-time minimization is critical.
Recommended
DC Motor Drive (H-Bridge Low-Side)
In brushed-DC and BLDC H-bridge low-side positions the IRLS3036TRLPBF handles continuous currents up to 195 A at 100 C case with 1.9 mOhm conduction loss, which keeps thermal rise manageable in 24 V and 36 V e-mobility and industrial-drive applications. The logic-level gate drive enables direct PWM from a 3.3 V MCU or 5 V gate driver without a charge pump. Its 1100 A pulsed rating absorbs motor stall inrush, and the avalanche-rated body diode simplifies the freewheeling path. The D2PAK footprint supports high continuous current on a 4-layer FR-4 PCB with 2 oz copper. Trade-off: at PWM frequencies above 20 kHz, gate-drive losses from the 91 nC Qg require a dedicated MOSFET gate driver IC.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
The IRLS3036TRLPBF serves as the battery-isolation and load-sharing switch in 24 V or 48 V UPS systems, where its 1.9 mOhm Rds(on) keeps voltage-drop below 100 mV at 50 A load, preserving battery runtime. The 60 V Vdss and avalanche rating protect against inductive transients when switching battery banks, and the logic-level gate enables low-power microcontroller control. In a typical OR-ing topology two IRLS3036TRLPBF devices share the load with reverse-current blocking via source-sense comparators. The D2PAK package provides the thermal headroom for continuous battery-charging current. Trade-off: at very low Vgs the Rds(on) rises sharply, so a 10 V gate-drive supply is recommended rather than 5 V for high-current paths.
Recommended
Hot-Swap / eFuse Controller for 24V Industrial Rails
In 24 V industrial hot-swap and eFuse circuits the IRLS3036TRLPBF acts as the inrush-current-limiting element, with its 1.9 mOhm Rds(on) supporting continuous 50-100 A loads and its 1100 A pulsed rating absorbing the hot-plug capacitor-charge inrush. The logic-level gate enables digital control from a hot-swap controller such as the LTC4282. The 60 V Vdss handles 24 V industrial transients with derating margin. The D2PAK's low thermal resistance keeps the part cool during sustained short-circuit current limiting. Trade-off: the part does not have built-in current sensing, so a sense resistor or inductor DCR sensing is required for accurate current-limit thresholds.
Recommended
High-Power LED Driver / Solenoid Switch
For high-current LED drivers and industrial solenoid drivers, the IRLS3036TRLPBF delivers 270 A peak with 1.9 mOhm loss in a compact D2PAK footprint, ideal for driving 12 V and 24 V high-power LED arrays and DC solenoids. The logic-level gate threshold allows direct PWM dimming from a 3.3 V or 5 V MCU. The avalanche-rated body diode handles the inductive kickback from solenoid de-energization, eliminating the need for an external flyback diode in many applications. The wide -55 to +175 C operating range suits industrial and outdoor installations. Trade-off: at high PWM frequencies the 91 nC Qg demands a gate-driver IC; for low-frequency on/off control the part can be driven directly.
Recommended
Battery Protection and OR-ing in Telecom Systems
In telecom 48 V battery plants and -48 V distribution systems, the IRLS3036TRLPBF provides the OR-ing function between paralleled rectifiers and batteries, where its 60 V Vdss and 1.9 mOhm Rds(on) minimize forward drop and the logic-level gate enables fast reverse-current detection. The avalanche rating handles load-dump and ringing transients on long battery cables, and the D2PAK's robust thermal path supports continuous battery-charge current. For higher-voltage 48 V nominal systems the IRF1310NSTRLPBF (100 V) is the recommended drop-in. Trade-off: the part is N-channel, so a charge pump or P-channel companion is needed for true high-side switching; alternatively, place it on the return (low-side) path for ground-referenced OR-ing.
Recommended
Recommended Products Summary
Engineering reference data for IRLS3036TRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AUIRLS3036TRL | IRLS3036PBF | IRFB3207ZPBF | IRFB4020PBF | IRF1310NSTRLPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Vdss (V) | 60 | 60 | 60 | 75 | 200 | 100 |
| Continuous Id @ Tc=25C (A) | 270 | 270 | 270 | 170 | 100 | 180 |
| Rds(on) max @ Vgs=10V (mOhm) | 1.9 | 1.9 | 1.9 | 4.5 | 7.5 | 3.6 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Automotive Qualified | No | Yes (AEC-Q101) | No | No | No | No |
Key Differentiators
- Lowest Rds(on) in 60V D2PAK class at 1.9 mOhm (vs IRFB3207ZPBF (4.5 mOhm, 75V))
- Automotive-qualified drop-in via AU variant (vs IRLS3036PBF (industrial grade, tube pack))
- Logic-level gate drive compatible with 3.3V/5V MCUs (vs Standard HEXFET (10V gate drive required))
Design Notes
Estimated: at 100 A continuous load with Rds(on) of 1.9 mOhm the IRLS3036TRLPBF dissipates approximately P = I^2 x R = 100^2 x 0.0019 = 19 W. With the D2PAK on a 4-layer 2 oz copper PCB (RthetaJA approximately 40 C/W for 1 sq inch of copper) the junction temperature rise above ambient is 19 W x 40 C/W = 760 C above 25 C, requiring thermal derating or a forced-air heatsink. The D2PAK tab MUST be soldered to a generous copper pour (minimum 1 sq inch, preferably 3-4 sq inches) on top and bottom layers with thermal vias for adequate heat removal. Always verify junction temperature with measured RthetaJA in the actual PCB layout rather than relying on the datasheet RthetaJA figure alone.
Minimize the source-inductance loop by placing the gate-drive return (Kelvin source) as close to the package source pin as possible. The D2PAK TO-263 footprint has a single source pin; for high di/dt switching (>500 A/us) a 4-pin D2PAK-7 (Kelvin source) package variant is preferred. Use a 10 ohm gate-source resistor to prevent inadvertent turn-on from dv/dt, and place a 100 kohm pull-down on the gate to ensure the MOSFET stays off during MCU reset or power-up. The exposed thermal pad requires an array of 0.3 mm thermal vias (8-12 vias minimum) connecting top copper to inner and bottom copper planes for heat spreading.
Do not exceed the absolute maximum Vgs of +/- 20 V; use a 10 V gate-drive supply for full enhancement. The 'logic-level' IR family is fully enhanced at 4.5 V Vgs, but Rds(on) is specified at 10 V Vgs - derate conduction loss by 2-3x if you drive at 5 V. The integrated body diode has higher reverse-recovery charge than a Schottky, so minimize dead-time in synchronous-rectifier designs to avoid shoot-through and body-diode conduction losses. Finally, the D2PAK drain tab is internally connected to pin 2 (drain); ensure the heatsink is electrically isolated or accept that the heatsink will be at drain potential.
Compliance Information
RoHS compliant per Infineon product page (PBF suffix). Not AEC-Q100 qualified in the standard part; choose AUIRLS3036TRL for AEC-Q101 automotive qualification. Conflict-mineral compliance per Infineon CMRT.
