IRS21091STRPBF vs IR2101STRPBF Comparison

Detailed side-by-side comparison of IRS21091STRPBF by Infineon and IR2101STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRS21091STRPBF IR2101STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.68
Configuration Half-Bridge Half-Bridge (High-Side and Low-Side), Independent
Number of Drivers 2 2
Driven Channels High-Side and Low-Side, Synchronous —
Gate Type IGBT, N-Channel MOSFET —
Logic Input Compatibility CMOS or LSTTL, down to 3.3 V 3.3 V / 5 V / 15 V CMOS/LSTTL
Output Polarity Non-Inverting —
Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Negative Transient Tolerance Yes, dV/dt immune —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 750 ns —
Deadtime Control Programmable —
Shutdown Pin Yes —
Package 8-SOIC (0.154", 3.90 mm width) 8-SOIC (0.154 inch, 3.90 mm Width)
Packaging Tape & Reel —
RoHS Status Compliant Compliant
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Mounting Type — Surface Mount
Operating Temperature — -40 C to +125 C
MSL Level — MSL 3

Datasheets & Resources

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