IRS21091STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IRS21091STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.19 | $1.19 |
| 10 | $1.08 | $10.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
IRS21091STRPBF Overview
A half-bridge gate driver is a type of power-management IC that sits between a low-voltage control signal (typically from a microcontroller or PWM controller) and the gate of a high-voltage power switch. The high-side output uses a bootstrap capacitor technique to generate a floating supply above the bus voltage, which is necessary to turn on an N-channel MOSFET or IGBT in the upper leg of the half-bridge. Half-bridge drivers belong to the broader family of gate drivers, which in turn sit within the power management IC hierarchy.
Key features of the IRS21091STRPBF include a 600V floating channel, typical 290 mA source / 600 mA sink gate-drive current, a low 750 ns propagation delay, a logic input compatible with standard CMOS or LSTTL outputs down to 3.3 V logic, an integrated shutdown pin, and user-programmable deadtime to prevent shoot-through. The matched propagation delays between the two channels keep PWM duty-cycle distortion low. The output drivers use a high-pulse-current buffer stage designed to minimize driver cross-conduction.
Architecturally, the part uses Infineon's high-voltage BCDMOS process. A level-shifter couples the low-voltage logic input to the high-side floating channel, while the bootstrap diode (or external bootstrap diode) charges the bootstrap capacitor off the VCC rail on every low-side cycle. The integrated deadtime control lets designers trade margin against switching loss without an external timing network.
Typical applications include motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), half-bridge and full-bridge converters, and any high-voltage synchronous-rectification topology where IGBT or MOSFET gates must be driven above the bus rail. Designers choose this part when they need 600V tolerance in a compact 8-SOIC, with logic-level inputs that can be driven directly from a 3.3 V MCU.
A primary design tip: the bootstrap capacitor value is critical. Too small a capacitor causes the high-side UVLO to trip under load; too large slows startup. A 0.1 uF to 1 uF X7R ceramic is typical, sized using the Qg of the driven MOSFET, the switching frequency, and the gate charge per cycle.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRS21091STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS21091STRPBF (same form factor and footprint) β differing in Package, RoHS Status, Input Logic Compatibility, Packaging, Sink Current (typical).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2109SPBF
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet βIRS21091SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2128SPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2304SPBF
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet βIRS21867STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIRS21091STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Driven Channels | High-Side and Low-Side, Synchronous |
| Gate Type | IGBT, N-Channel MOSFET |
| Logic Input Compatibility | CMOS or LSTTL, down to 3.3 V |
| Output Polarity | Non-Inverting |
| Supply Voltage (VCC) | 10 V to 20 V |
| Floating Channel Offset Voltage | up to +600 V |
| Negative Transient Tolerance | Yes, dV/dt immune |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.6 A |
| Propagation Delay (typ.) | 750 ns |
| Deadtime Control | Programmable |
| Shutdown Pin | Yes |
| Package | 8-SOIC (0.154", 3.90 mm width) |
| Packaging | Tape & Reel |
| RoHS Status | Compliant |
IRS21091STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate-drive supply (10 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side output (CMOS/LSTTL, 3.3 V compatible) |
| Pin 3 | LIN β Logic input for low-side output (CMOS/LSTTL, 3.3 V compatible) |
| Pin 4 | /SD β Shutdown input, active low (logic-low disables both outputs) |
| Pin 5 | DT β Deadtime programming pin - resistor to VCC sets deadtime |
| Pin 6 | VSS / COM β Ground and low-side gate-drive return |
| Pin 7 | LO β Low-side gate-drive output |
| Pin 8 | VS β High-side floating supply return (switch node) |
Typical Applications
IRS21091STRPBF is suitable for 7 applications: Half-Bridge Motor Drive (H-Bridge and 3-Phase), Switch-Mode Power Supply (SMPS) Half-Bridge and Full-Bridge, Uninterruptible Power Supply (UPS) Inverter Stage, Solar Inverter DC-DC Boost / Half-Bridge Stage, Induction Heating Resonant Inverter, Automotive 48V Mild-Hybrid DC-DC Converter, Class D Audio Amplifier Output Stage.
Half-Bridge Motor Drive (H-Bridge and 3-Phase)
The IRS21091STRPBF drives the high-side and low-side IGBTs or N-channel MOSFETs of one half-bridge leg, with the 600 V floating channel covering 120/240 V AC bus rails and 400 V DC-link motors. Its 0.29 A source / 0.6 A sink gate current is sufficient for MOSFETs in the 30-100 nC Qg class typical of 600 V motor-drive inverters, while programmable deadtime prevents shoot-through between the upper and lower switches. According to the datasheet, the 3.3 V CMOS-compatible inputs allow direct connection to MCU PWM outputs without level shifters. The SO-8 footprint is well-suited to compact 3-phase inverter modules where PCB area is constrained. Estimated: a 100 kHz switching frequency with a 50 nC Qg MOSFET requires about 5 mA average gate current - well within the IRS21091's capability.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge and Full-Bridge
In half-bridge and full-bridge SMPS topologies, the IRS21091STRPBF drives the primary-side switches of the converter with 600 V margin for 120/240 VAC rectified bus rails up to 400 VDC. According to the manufacturer datasheet, the floating channel tolerates negative transients on the high-side return, which is critical for hard-switched bridges where ringing couples back through the transformer's leakage inductance. The 750 ns propagation delay is matched between channels, keeping PWM duty-cycle accuracy high at switching frequencies up to 100 kHz. The integrated shutdown pin allows the system controller to disable both outputs on a UV/OV fault without external gating logic. Estimated: at 100 kHz with 100 nC Qg MOSFETs, total gate-drive loss is approximately 0.1 W per switch - acceptable for a 500 W PSU without heatsinking the driver.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
In UPS systems, the IRS21091STRPBF drives the IGBT half-bridge stages of the line-interactive or online double-conversion inverter that synthesizes 120/230 VAC from a battery bus. The 600 V floating channel and dV/dt immunity handle the harsh switching environment of the H-bridge output filter, while the integrated shutdown pin enables fast disconnect on output overcurrent or short-circuit. The 3.3 V logic input allows direct drive from a low-voltage DSP or MCU PWM peripheral, removing the need for external level shifters. The 8-SOIC package is suitable for compact 1-3 kVA UPS modules where PCB density is high. Estimated: with a 20 kHz switching frequency and 50 nC IGBT, total driver loss is around 0.05 W per leg - well below the 8-SOIC's 0.5 W thermal limit.
Recommended
Solar Inverter DC-DC Boost / Half-Bridge Stage
The IRS21091STRPBF drives the IGBT or MOSFET half-bridge in a solar inverter's DC-DC boost stage, taking a panel-side voltage up to 600 V and switching at 20-50 kHz for energy extraction. The floating channel is rated to 600 V, sufficient for residential and small-commercial PV inverter bus rails. Programmable deadtime lets designers optimize the trade-off between switching loss and shoot-through margin in the high-current boost leg. The shutdown pin allows fast disable of the boost on input overvoltage or inverter grid-fault conditions. According to the manufacturer datasheet, the part is dV/dt immune, which is critical in solar applications where the long DC wiring introduces large dV/dt transients back into the bridge. Estimated: at 30 kHz with 80 nC MOSFET, gate-drive loss is around 0.05 W - negligible compared to the switching loss of the main power device.
Recommended
Induction Heating Resonant Inverter
The IRS21091STRPBF drives the resonant half-bridge in a domestic induction-heating cooktop, where the 600 V floating channel handles the rectified 230/400 VDC bus and the dV/dt immunity is critical for the high dI/dt transitions of the resonant tank. The matched channel-to-channel propagation delay (750 ns) keeps the operating frequency stable across the resonant tank's tuning range, and the programmable deadtime allows precise control of the zero-voltage-switching (ZVS) window. The 3.3 V logic input allows direct connection to the cooktop's MCU, which typically operates at 3.3 V. The 8-SOIC package fits the compact cooktop power module, where PCB area is at a premium. Estimated: at 30-50 kHz with 150 nC IGBT, total driver loss is around 0.1-0.2 W per leg - well within the 8-SOIC's thermal limit.
Recommended
Automotive 48V Mild-Hybrid DC-DC Converter
The IRS21091STRPBF drives the high-side and low-side switches of a 48V mild-hybrid DC-DC converter that interfaces the 48V bus with the 12V battery rail. The 600 V floating channel provides comfortable margin over the 48V bus transients (which can spike to 80-100V during load dump) and the dV/dt immunity keeps the driver robust under the noisy automotive environment. The 3.3V logic input allows direct connection to an automotive MCU's PWM peripheral, removing external level-shifter components and reducing BOM cost. The integrated shutdown pin provides a fast-disconnect path for OVP, OCP, and reverse-battery fault conditions. According to the manufacturer datasheet, the device is rated for -40C to +125C operation, suitable for under-hood automotive modules. Estimated: at 100 kHz with 50 nC MOSFETs, the driver loss is around 0.05 W per switch - well within the SO-8 thermal envelope.
Recommended
Class D Audio Amplifier Output Stage
The IRS21091STRPBF drives the high-side and low-side N-channel MOSFETs of a Class D audio amplifier's half-bridge output stage, with the 600V floating channel providing headroom for automotive and prosumer 50-100V bus rails. The matched propagation delay (750 ns) between the two channels preserves PWM symmetry, which is critical for low THD+N at high audio frequencies. The 3.3V CMOS logic input allows direct connection to a DSP modulator, removing external logic-level shifters. According to the manufacturer datasheet, the integrated shutdown pin provides a fast mute path on input signal-loss or DC fault detection. Estimated: at 400 kHz PWM with 30 nC MOSFETs, the driver loss is about 0.05 W per switch - well within the 8-SOIC's thermal envelope.
Recommended
Recommended Products Summary
Engineering reference data for IRS21091STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2109SPBF | IRS21091SPBF | IRS2128SPBF | IR2304SPBF | IRS21867STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Floating Channel Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Source Current (typ.) | 0.29 A | 0.29 A | 0.29 A | 0.29 A | 0.13 A | 2.0 A |
| Sink Current (typ.) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.27 A | 2.0 A |
| Propagation Delay (typ.) | 750 ns | 750 ns | 750 ns | 750 ns | 200 ns | 180 ns |
| Shutdown Pin | Yes (active low) | No | Yes | Yes (with OC protection) | No (internal deadtime only) | Yes |
| Programmable Deadtime | Yes (DT pin) | No (internal fixed) | Yes | No | No (internal fixed 520 ns) | Yes (DT pin) |
Key Differentiators
- Integrated shutdown pin and programmable deadtime (vs IR2109SPBF)
- Same 8-SOIC footprint as the IR2304SPBF but with user-tunable deadtime (vs IR2304SPBF)
- Lower drive strength than the IRS21867STRPBF but with same 8-SOIC footprint (vs IRS21867STRPBF)
Design Notes
Bootstrap capacitor sizing is critical for the high-side channel. The bootstrap capacitor (CBOOT) must supply the gate charge (Qg) of the high-side MOSFET plus the quiescent current of the high-side driver for the duration of one PWM cycle. A starting-point formula: CBOOT >= Qg_total / dV, where dV is the allowable droop on CBOOT (typically 0.1-0.5 V). For a 100 nC Qg MOSFET and 0.2 V droop, CBOOT >= 0.5 uF. Use X7R ceramic with voltage rating above VCC + 15 V headroom. Estimated: at 100 kHz with 50 nC MOSFET, Qg_total per cycle is around 50 nC, and a 0.47 uF X7R 50V capacitor is a robust choice. Use a bootstrap diode with ultrafast reverse recovery (trr < 50 ns) - the integrated bootstrap diode is not present on this part; an external UF4007 or ES1J is typical.
PCB layout for half-bridge gate drivers must keep the high-current loop (VCC - bootstrap - high-side MOSFET - low-side MOSFET - VSS) as small as possible to minimize parasitic inductance. Place the bootstrap capacitor (CBOOT) directly between pin 1 (VCC) and pin 8 (VS) of the IRS21091STRPBF, and the VCC bypass capacitor (1 uF X7R) directly between pin 1 and pin 6 (VSS). According to the manufacturer datasheet, the high-side gate-drive loop (HO - HS - external gate resistor - gate of high-side MOSFET) should be a tight loop of less than 1 square cm to avoid ringing. Use a ground plane on the bottom layer tied to pin 6 (VSS) to provide a low-impedance return for the low-side gate-drive current. Place the deadtime resistor (RDT) close to pin 5 (DT) to minimize noise pickup on the timing node.
Three common pitfalls to avoid when designing with the IRS21091STRPBF. (1) Do not leave the DT pin floating - the deadtime defaults to minimum and shoot-through can occur at high load. (2) The /SD pin must be pulled high (to VCC through 10 kohm, or driven by MCU) for normal operation; leaving it floating disables both outputs. (3) The VCC supply must be locally decoupled with at least 1 uF X7R within 5 mm of pin 1; insufficient decoupling causes VCC to dip below the UVLO threshold during high-side switching, leading to spurious shutdowns. Estimated: total gate charge for a 600 V, 20 A IGBT is around 100-150 nC, so 1 uF VCC decoupling is appropriate. Verify against the manufacturer's application note AN-1123 before finalizing layout.
The 8-SOIC package of the IRS21091STRPBF has a typical theta_JA of 150 C/W on a standard 4-layer JEDEC test board, and approximately 100 C/W on a board with 1 square inch of continuous copper pour on the top layer. Estimated: at VCC=15V, switching frequency 100 kHz, and driving a 100 nC Qg MOSFET, total gate-drive power dissipation is approximately 2 * VCC * Qg * fsw = 2 * 15 * 100e-9 * 100e3 = 0.3 W. With 150 C/W theta_JA, junction temperature rise is around 45 C above ambient, which is well within the -40C to +125C operating range. For high-frequency designs (>200 kHz) or large Qg MOSFETs (>200 nC), consider a copper pour on the board or upgrading to the IRS21867STRPBF (8-SOIC, 2.0/2.0 A source/sink) for better thermal margin.
Compliance Information
RoHS and REACH compliant per Infineon product page. Lead-free per SO-8 standard finish. AEC-Q100 qualification not stated on the part; for AEC-Q100-qualified automotive 600 V half-bridge drivers, see Infineon's IRS21091 automotive-grade variants or the IR2304S automotive version. Halogen-free status not explicitly stated in the verified data.
