IRS21091STRPBF vs IR2101STRPBF 对比

详细并排对比 IRS21091STRPBF 出自 Infineon 和 IR2101STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS21091STRPBF IRS21091STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS21091STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS21091STRPBF ✓ 量产中

规格对比

参数 IRS21091STRPBF IR2101STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $0.68
Configuration Half-Bridge Half-Bridge (High-Side and Low-Side), Independent
Number of Drivers 2 2
Driven Channels High-Side and Low-Side, Synchronous —
Gate Type IGBT, N-Channel MOSFET —
Logic Input Compatibility CMOS or LSTTL, down to 3.3 V 3.3 V / 5 V / 15 V CMOS/LSTTL
Output Polarity Non-Inverting —
Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Negative Transient Tolerance Yes, dV/dt immune —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 750 ns —
Deadtime Control Programmable —
Shutdown Pin Yes —
封装 8-SOIC (0.154", 3.90 mm width) 8-SOIC (0.154 inch, 3.90 mm Width)
Packaging Tape & Reel —
RoHS 状态 Compliant Compliant
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
安装类型 — Surface Mount
工作温度 — -40 C to +125 C
MSL 等级 — MSL 3

数据手册与资源

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