ISC011N03L5SATMA1 vs BSZ011NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active
Infineon
BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N03L5SATMA1 BSZ011NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $0.55
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 / StrongIRFET 30 V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) @ Ta=25C 37 A β€”
Continuous Drain Current (ID) @ Tc=25C 100 A β€”
Power Dissipation (PD) @ Ta=25C 2.5 W β€”
Power Dissipation (PD) @ Tc=25C 96 W β€”
Package PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (TJ) β€”
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench)
Gate Drive Logic-level compatible β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 35 A
Continuous Drain Current (ID) at TC=25Β°C β€” 40 A
On-State Resistance RDS(on) max at VGS=10 V β€” 1.1 mΞ© (typical, per datasheet title)
Power Dissipation at TA=25Β°C β€” 2.1 W
Power Dissipation at TC=25Β°C β€” 69 W
Gate Threshold Voltage VGS(th) β€” 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) β€” 4.5 V to 10 V
Operating Temperature Range β€” -55Β°C to +150Β°C
Lead-Free β€” Yes
Halogen-Free β€” Yes

Datasheets & Resources

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