ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
MPN: ISC011N03L5SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.86 | $8.60 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.54 | $540.00 |
| 5,000 | $0.47 | $2,350.00 |
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View Datasheet →ISC011N03L5SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | 100 A |
| Power Dissipation (PD) @ Ta=25C | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | 96 W |
| Package | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 C to +175 C (TJ) |
| Technology | OptiMOS 5 trench MOSFET |
| Gate Drive | Logic-level compatible |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
ISC011N03L5SATMA1 Pin Configuration
| Pin 1 | Source (S) — Source terminal, connected to pins 1-3 |
| Pin 2 | Source (S) — Source terminal, connected to pins 1-3 |
| Pin 3 | Source (S) — Source terminal, connected to pins 1-3 |
| Pin 4 | Gate (G) — Logic-level gate drive input |
| Pin 5 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
| Pin 6 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
| Pin 7 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
| Pin 8 | Drain (D) — Drain terminal, connected to pins 5-8 and exposed pad |
ISC011N03L5SATMA1 Safe Operating Area
Typical Applications
ISC011N03L5SATMA1 is suitable for 6 applications: 12 V Point-of-Load (POL) DC-DC Buck Converter, Brushless DC (BLDC) Motor Drive H-Bridge, Battery Protection and Power Path Management, Synchronous Rectification in 12 V SMPS, Hot-Swap / eFuse Switch on 12 V Distribution Rails, OR-ing FET in Redundant 12 V Power Architectures.
12 V Point-of-Load (POL) DC-DC Buck Converter
The ISC011N03L5SATMA1 serves as the low-side synchronous rectifier (or high-side control FET) in a 12 V-input buck converter delivering 3.3 V to 12 V at 10-30 A, common in telecom and server boards. Its very low RDS(on) in the 30 V OptiMOS 5 class minimizes conduction loss, while its low Qg reduces switching loss at 300-700 kHz switching frequencies, achieving peak efficiencies above 96%. The TDSON EP footprint supports 96 W dissipation at case and the logic-level gate enables direct 3.3 V PWM drive from a digital controller. Placed between the 12 V input rail and the output inductor with Kelvin-source routing for clean gate drive.
Recommended
Brushless DC (BLDC) Motor Drive H-Bridge
In a 12 V BLDC motor drive or a brushed-DC H-bridge, the ISC011N03L5SATMA1 is used as the low-side (and optionally high-side with gate driver) switching element per phase. Its 100 A TC-rated continuous current supports high-torque motor windings, while the 30 V VDS gives margin against regenerative back-EMF spikes (typically clamped at 24 V by the bus capacitor). The exposed pad of the TDSON-8 package enables direct PCB heatsinking so the FET can sustain PWM switching at 20-50 kHz without external heatsinks. Logic-level drive simplifies the interface to a 3.3 V motor-control MCU.
Recommended
Battery Protection and Power Path Management
The ISC011N03L5SATMA1 is well suited as a battery protection FET or power-path OR-ing MOSFET in 4S-8S Li-ion battery packs (12-36 V nominal). Its 30 V VDS covers up to 8S Li-ion fully charged (33.6 V), and the 100 A TC rating handles high discharge currents in power-tool and e-bike applications. The logic-level gate drive enables direct control from a battery management IC (BMIC) operating at 3.3 V. The exposed pad allows PCB-side thermal dissipation during high-current discharge transients. Place on the high-side with a charge pump or on the low-side with a BMIC-driven pull-down gate resistor.
Recommended
Synchronous Rectification in 12 V SMPS
In an isolated or non-isolated 12 V-input switch-mode power supply (SMPS) with a 5 V to 24 V output, the ISC011N03L5SATMA1 replaces the secondary-side Schottky rectifier with a synchronous MOSFET to recover the diode forward drop (typically 0.3-0.5 V at 30 A, equivalent to 9-15 W of loss). Its low RDS(on) and low Qg are tuned for the rectification switching pattern (one transistor per switching cycle, body-diode conduction during dead-time). The TDSON EP exposed pad dissipates the residual conduction loss to PCB copper, and the logic-level gate accepts direct drive from a synchronous-rectifier controller IC.
Recommended
Hot-Swap / eFuse Switch on 12 V Distribution Rails
The ISC011N03L5SATMA1 acts as the main pass element in a 12 V hot-swap controller or electronic fuse (eFuse) circuit, protecting backplane distribution from inrush transients when a plug-in card is inserted. Its 30 V VDS withstands 24 V load-dump transients on automotive 12 V rails, and the 100 A TC rating supports high-power board insertion. The logic-level gate accepts drive directly from hot-swap controllers such as the LTC4217 or TPS2590. Add a 10 kohm gate-source pull-down for dv/dt immunity, and clamp VGS with a 12 V Zener for transient protection.
Recommended
OR-ing FET in Redundant 12 V Power Architectures
In redundant 12 V server or telecom power systems, the ISC011N03L5SATMA1 functions as an OR-ing MOSFET that replaces Schottky diodes to reduce the per-channel forward-conduction loss from 0.4 V to RDS(on) x I (e.g., 0.005 V at 30 A). Its fast body diode and logic-level gate enable dynamic current-sharing between redundant supply feeds, with a controller such as the LTC4352 or LM5050 regulating the gate to share load and block reverse current. The 30 V VDS tolerates bus transients, and the TDSON EP dissipates load current losses to PCB copper.
Recommended
Recommended Products Summary
Engineering reference data for ISC011N03L5SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC0802NLSATMA1 | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 | BSC022N04LS6ATMA1 | IPD135N03LGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (TDSON EP) | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 40 V | 30 V |
| Continuous Drain Current (ID @ TC=25C) | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Generation / Technology | OptiMOS 5 / StrongIRFET 30 V (-L5S) | OptiMOS 5 / StrongIRFET 30 V (-L5S) | OptiMOS 5 / StrongIRFET 30 V (-L5S) | OptiMOS 5 40 V (-NM5) | OptiMOS 5 40 V (-LS6) | OptiMOS 3 30 V |
| Logic-Level Gate Drive | Yes | Yes | Yes | Yes | Yes | Yes |
| Typical RDS(on) Class at 4.5 V VGS | Lowest (OptiMOS 5 -L5S grade) | Low (lower cost grade) | Low (lower cost grade) | Medium (40 V trade-off) | Medium | Higher (older OptiMOS 3) |
| Approx. Unit Price (qty 1000, as of 2026-09-13) | USD 0.54 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) class in Infineon 30 V OptiMOS 5 family (vs ISC0802NLSATMA1)
- 30 V VDS rating optimized for 12 V rails vs 40 V family (vs ISC015N04NM5ATMA1)
- Latest-generation OptiMOS 5 vs OptiMOS 3 (vs IPD135N03LGATMA1)
Design Notes
Estimated: at VDS = 30 V, ID = 37 A (TA rating), and RDS(on) of 1.5 mOhm (typical OptiMOS 5 -L5S), conduction loss is approximately 37 A x 37 A x 0.0015 Ohm = 2.05 W, well within the 2.5 W TA rating when the TDSON-8 exposed pad is soldered to at least 1 in^2 of 1 oz copper. For higher dissipation, attach the exposed pad to an external cold plate or add thermal vias to inner-plane copper. Junction-to-ambient thermal resistance (theta_JA) on a 1 in^2 1 oz pad is approximately 50 C/W for the TDSON-8 package, yielding a 25 C temperature rise per watt of dissipation.
Route the high-current loop (drain to source through the external load) over the smallest possible PCB area to minimize parasitic inductance - typically a 5-10 nH stray inductance can ring at 50-100 MHz with the drain-side dv/dt, generating > 30 V overshoot that can punch through the 30 V VDS rating. Place the gate-drive loop (gate to source pull-down resistor to source pin) over a similarly small area. Keep the gate-source 10 kohm-100 kohm pull-down resistor within 5 mm of the gate pin to suppress dv/dt-induced turn-on.
Do not drive the ISC011N03L5SATMA1 with a gate voltage exceeding the maximum VGS rating of +/- 20 V (typically +/- 12 V or +/- 10 V in practice for margin). A gate-source Zener clamp (e.g., 12 V) is recommended in motor-drive and hot-swap applications to protect against transient gate over-voltage. Do not operate the device above the SOA curve at DC - the 96 W TC rating assumes 25 C case; derate linearly to zero at 175 C junction.
Use a 4-layer PCB with a solid ground plane directly beneath the MOSFET for lowest thermal resistance. Place thermal vias in a 3 x 3 grid (0.3 mm drill, 0.6 mm pitch) directly under the exposed pad to conduct heat into inner copper planes. Keep high-voltage drain traces away from low-voltage gate traces to prevent capacitive coupling that can inject noise into the gate drive. Use wide copper pours (>= 50 mil trace width) for source and drain connections to minimize conduction loss in the PCB itself.
Compliance Information
RoHS and REACH compliance per Infineon product page; MSL Level 1 (unlimited floor life) per JEDEC J-STD-020. Not AEC-Q100 qualified - this part targets industrial / consumer applications. For automotive-grade equivalents, look at Infineon's AEC-Q100 qualified OptiMOS 5 variants.
