ISC011N03L5SATMA1 vs BSZ011NE2LS5IATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N03L5SATMA1 disebabkan oleh Infineon dan BSZ011NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC011N03L5SATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Kemasan | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 (Trench) |
| Gate Drive | Logic-level compatible | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |