ISC015N04NM5ATMA1 vs BSC015NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC015N04NM5ATMA1 BSC015NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 trench
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) —
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Operating Temperature Range -55 C to +175 C (junction, per OptiMOS 5) -55C to +150C (junction)
Package / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Mounting Type Surface Mount Surface Mount
Pin Count 8 8
RoHS Status Compliant Compliant
MSL Level 1 (per Infineon SuperSO8 family) 1 (per JEDEC J-STD-020)
Drive Level Normal Level (VGS(th) ~3.4 V) —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Package — PG-TDSON-8-6 (SuperSO8 5x6)
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]

Datasheets & Resources

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