ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: ISC015N04NM5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.78 | $17.80 |
| 100 | $1.52 | $152.00 |
| 500 | $1.31 | $655.00 |
| 1,000 | $1.15 | $1,150.00 |
| 5,000 | $0.98 | $4,900.00 |
Drop-in alternatives for ISC015N04NM5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC014N04LSIATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.39 / Unit
View Datasheet →BSC0906NSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →IAUC100N04S6L025ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →ISC080N10NM6ATMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →NTMFS4935N
✅ Drop-In📋 Reference alternative (not in catalog)
ISC015N04NM5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level |
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | 33 A |
| Continuous Drain Current (ID) at Tc=25C | 206 A |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 115 W |
| Operating Temperature Range | -55 C to +175 C (junction, per OptiMOS 5) |
| Package / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| RoHS Status | Compliant |
| MSL Level | 1 (per Infineon SuperSO8 family) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) |
ISC015N04NM5ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Source — Source terminal (low-side connection) |
| Pin 3 | Source — Source terminal (low-side connection) |
| Pin 4 | Gate — Gate drive input (normal-level, ~3.4V threshold) |
| Pin 5 | Drain — Drain terminal (electrically connected to exposed pad) |
| Pin 6 | Drain — Drain terminal (electrically connected to exposed pad) |
| Pin 7 | Drain — Drain terminal (electrically connected to exposed pad) |
| Pin 8 | Drain — Drain terminal (electrically connected to exposed pad) |
Safe Operating Area (DC)
Typical Applications
ISC015N04NM5ATMA1 is suitable for 6 applications: 12V Synchronous Rectification in Server VRMs, 24V Industrial OR-ing and Hot-Swap, E-Mobility Motor Drive H-Bridge, USB Power Delivery (PD) High-Current Buck, Battery Protection in 12V LiFePO4 Systems, Point-of-Load (POL) DC-DC Conversion.
12V Synchronous Rectification in Server VRMs
The ISC015N04NM5ATMA1 is ideal for the synchronous-rectifier (low-side) position in 12 V input buck converters that feed server CPUs and GPUs. Its 1.5 mOhm R_DS(on) at VGS = 10 V translates directly into conduction losses below 0.5% at 20 A, while the 40 V VDS rating provides generous headroom for 12 V transients up to 18 V. The SuperSO8 5x6 footprint has become the de-facto standard for 12 V VRM phases, enabling layout reuse between designs. Placed on the low-side of a multiphase buck topology with a 10 V gate-drive bootstrap, the part achieves >95% efficiency at 500 kHz. Unlike older OptiMOS 3 parts, the OptiMOS 5 generation reduces switching losses by ~30%, allowing higher switching frequencies without efficiency penalty.
Recommended
24V Industrial OR-ing and Hot-Swap
The ISC015N04NM5ATMA1 is well-suited for OR-ing MOSFETs in redundant 24 V industrial power systems and hot-swap controllers in PLC backplanes. Its 40 V VDS handles 24 V nominal rails with headroom for transient spikes to 36 V, and the 206 A pulsed drain current handles inrush events that occur when a hot-plugged card charges its bulk capacitors. The 3.4 V gate threshold gives clean turn-off during short-circuit events, preventing partial-turn-on linear-mode dissipation that destroys logic-level FETs. Mounted in the SuperSO8 5x6 package on a 50 mm squared copper pour, the device dissipates up to 3 W in free air without active cooling, adequate for most 24 V / 10 A rails. Pair with a dedicated hot-swap controller such as the LM5069 for full fault protection.
Recommended
E-Mobility Motor Drive H-Bridge
The ISC015N04NM5ATMA1 fits as a switching element in 24 V / 36 V e-bike and e-scooter H-bridge motor drives, where high current pulses and small PCB area are the dominant design constraints. Its 1.5 mOhm R_DS(on) keeps conduction losses below 5 W at 60 A peak phase current, which is typical for a 500 W motor controller. The 115 W power dissipation rating (Tc) provides thermal margin during 10-second hill-climb transients, while the 3.4 V gate threshold prevents shoot-through caused by microcontroller noise on the gate signals. The SuperSO8 5x6 footprint enables compact half-bridge layouts with minimal trace inductance. For higher-voltage 48 V e-mobility designs, upgrade to a 60 V or 80 V OptiMOS 5 part in the same package.
Recommended
USB Power Delivery (PD) High-Current Buck
The ISC015N04NM5ATMA1 serves as both high-side and low-side switch in 20 V USB-PD buck converters that deliver 5 A at 20 V (100 W) from a 24 V adapter input. Its 1.5 mOhm R_DS(on) keeps full-load efficiency above 96% at 400 kHz, while the 40 V VDS rating easily handles the 24 V nominal input plus ringing. The OptiMOS 5 technology reduces gate charge by ~40% versus OptiMOS 3, allowing the part to switch at 1 MHz in compact adapter designs without efficiency penalty. The SuperSO8 5x6 footprint is small enough for the 25 mm squared adapter PCB envelope. Pair with the XDPS2201 digital controller for USB-PD 3.1 EPR compliance and ultra-low standby current.
Recommended
Battery Protection in 12V LiFePO4 Systems
The ISC015N04NM5ATMA1 functions as the disconnect MOSFET in 12 V LiFePO4 battery packs used in solar storage and e-bike applications, where ultra-low R_DS(on) is critical during continuous discharge. Its 1.5 mOhm R_DS(on) on each of two back-to-back FETs contributes just 3 mOhm to the discharge path, preserving battery runtime. The 40 V VDS rating covers the 14.4 V float voltage with wide transient margin, and the 3.4 V gate threshold prevents false turn-on during electrostatic discharge events on the battery terminals. The compact SuperSO8 5x6 footprint allows two protection FETs plus a BMS chip to fit in a 30 mm squared footprint. Add a TVS such as the SMAJ33CA on the battery terminals for automotive-grade protection.
Recommended
Point-of-Load (POL) DC-DC Conversion
The ISC015N04NM5ATMA1 is suitable for non-isolated point-of-load buck converters that step 12 V down to 1 V or 1.8 V for FPGAs and ASICs. Its 1.5 mOhm R_DS(on) minimizes conduction loss in the high-side and low-side switches, and the OptiMOS 5 technology keeps total gate charge around 70 nC, allowing 1 MHz switching with negligible dead-time losses. The 40 V VDS rating is overkill for 12 V input but provides headroom for reflected noise and 24 V transient events on industrial buses. The SuperSO8 5x6 footprint supports 30 A continuous current on a 50 mm squared copper pour. For higher-current POL designs above 40 A, parallel two devices with 10 mm symmetrical copper layout to balance current sharing.
Recommended
Recommended Products Summary
Engineering reference data for ISC015N04NM5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LSIATMA1 | BSC0906NSATMA1 | IAUC100N04S6L025ATMA1 | ISC080N10NM6ATMA1 | NTMFS4935N |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | PG-TDSON-8 FL (SuperSO8 5x6) - same | SO-8 FL (5x6 mm) - pin-compatible |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| VDS max (V) | 40 | 40 | 40 | 40 | 100 | 40 |
| R_DS(on) max @ VGS=10V (mOhm) | 1.5 | 1.4 | 9.0 | 1.0 | 8.0 | 1.5 |
| Continuous ID at Tc=25C (A) | 206 | 206 | 44 | 240 | 100 | 200 |
| Gate Threshold VGS(th) typ (V) | 3.4 | 3.4 | 1.7 | 3.4 | 3.4 | 3.0 |
| Drive Level | Normal Level | Normal Level | Logic Level | Normal Level | Normal Level | Normal Level |
| Technology / Family | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 100V | onsemi N-channel 40V |
| Approximate Unit Price @ 1k (USD) | 1.15 | 1.35 | 0.65 | 1.45 | 1.95 | 1.10 |
Key Differentiators
- Industry-leading R_DS(on) x Qg figure-of-merit for 40V trench MOSFETs (vs BSC0906NSATMA1)
- Highest continuous drain current in SuperSO8 5x6 package (vs NTMFS4935N)
- Infineon OptiMOS 5 normal-level drive robustness (vs IAUC100N04S6L025ATMA1)
Design Notes
The SuperSO8 5x6 package achieves RthJA around 50 C/W on a 1-inch-square (645 mm squared) 2-oz copper pour, dropping to about 35 C/W on 4-oz copper with thermal vias to an inner plane. Estimated: at ID=20A continuous, RDS(on)=1.5 mOhm, the conduction loss is P=I^2 x R = 0.6 W, giving a junction-temperature rise of only 30 C above 25 C ambient - easily handled without a heatsink. For ID=40A continuous, the loss rises to 2.4 W and the temperature rise reaches 120 C, requiring either airflow or a larger copper pour. Always solder the exposed thermal pad to maximize heat extraction; dry-soldered samples have shown 2x higher junction-temperature rise.
Gate-drive loop inductance is the dominant cause of switching loss and ringing in SuperSO8 layouts. Place the gate resistor within 5 mm of pin 4 (gate), and route the gate return (source connection) on an adjacent inner layer with at least 0.5 mm trace width. Estimated: a gate-loop inductance of 10 nH combined with 70 nC of gate charge and 1 A peak gate current produces a voltage spike of about 10 V - enough to exceed the +/-20 V VGS rating if not snubbed. Add a 10 kOhm resistor from gate to source to keep the FET off during power-up before the controller initializes.
Three common pitfalls when using the ISC015N04NM5ATMA1: (1) Driving the gate from 3.3 V GPIO will not fully enhance the FET, causing R_DS(on) to rise 3-5x and triggering thermal runaway. Use a 10 V gate-drive supply or charge pump. (2) Forgetting to solder the exposed pad results in 2x higher junction temperature - inspect with X-ray or cross-section on prototype builds. (3) Using this part on a 48 V telecom bus exceeds the 40 V VDS rating by 20%; switch to ISC080N10NM6ATMA1 (100 V) instead. Always add a TVS diode across drain-source to clamp inductive kick in motor and relay applications.
For parallel operation of two ISC015N04NM5ATMA1 devices, use 10 mm symmetric copper layout on source and drain pads with a Kelvin-source connection for each gate. Estimated: with 30 A shared current, even 1 mOhm of source-trace mismatch causes 25% current imbalance between parallel FETs. Use individual gate resistors (typically 10 ohm) to dampen parasitic oscillation between the parallel FETs. Place a single 100 nF ceramic bypass capacitor within 5 mm of the common drain node, and use a 1 uF bulk capacitor for high-frequency decoupling.
Compliance Information
RoHS and REACH compliant per Infineon product page. The non-automotive grade - for AEC-Q100 qualified automotive 40V MOSFETs, see Infineon's automotive OptiMOS 5 selection. Halogen-free and lead-free reflow profile compatible with JEDEC J-STD-020 peak temperature 260 C.
