ISC015N04NM5ATMA1 vs BSC015NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N04NM5ATMA1 disebabkan oleh Infineon dan BSC015NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N04NM5ATMA1 BSC015NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 trench
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) —
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Gambaran Suhu Operasi -55 C to +175 C (junction, per OptiMOS 5) -55C to +150C (junction)
Kemasan / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Status RoHS Compliant Compliant
Aras MSL 1 (per Infineon SuperSO8 family) 1 (per JEDEC J-STD-020)
Drive Level Normal Level (VGS(th) ~3.4 V) —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Kemasan — PG-TDSON-8-6 (SuperSO8 5x6)
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]

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