ISC015N06NM5ATMA1 vs BSC016N06NSTATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and BSC016N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC016N06NSTATMA1
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
BSC016N06NSTATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | BSC016N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55 C to +150 C |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Part Number | β | BSC016N06NSTATMA1 |
| FET Type | β | N-Channel |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Continuous Drain Current (ID, Ta=25C) | β | 31 A |
| On-Resistance RDS(on) max (VGS=10V) | β | 1.6 mOhm |
| Power Dissipation (Tc) | β | 167 W |
| Power Dissipation (Ta) | β | 3 W |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Lead-Free | β | Yes |
| Series | β | OptiMOS |