ISC015N06NM5ATMA1 vs BSC019N06NSATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and BSC019N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N06NSATMA1
BSC019N06NSATMA1 - 60V 100A 1.95mΞ© OptiMOS 5 MOSFET | Infineon
BSC019N06NSATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | 100 A |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55C to +150C (junction) |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Part Number | β | BSC019N06NSATMA1 |
| Technology / Family | β | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | β | 60 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) Max @ VGS=10V | β | 1.95 mΞ© (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | β | 3.3 V |
| Power Dissipation (PD) at TA=25C | β | 136 W |
| MSL Level | β | 1 |
| Channel Type | β | N-Channel Enhancement Mode |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |