ISC015N06NM5LF2ATMA1 vs IQE012N03LM5CGSCATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N06NM5LF2ATMA1 dari Infineon dan IQE012N03LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC015N06NM5LF2ATMA1 IQE012N03LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 Linear FET 2 (N-Channel) OptiMOS 5 (trench MOSFET)
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V 2 V (typ, per Merlin listing)
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8 FL (5x6 mm) PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled)
Tipe Mounting Surface Mount Surface Mount
RoHS Compliant —
FET Type — N-Channel
Continuous Drain Current (ID) @ Ta — 34 A
Continuous Drain Current (ID) @ Tc — 224 A
Maximum RDS(on) @ VGS=10V — 1.15 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
Level MSL — 1 (per JEDEC J-STD-020, floor life unlimited)
Status RoHS — Compliant
Lead-Free — Yes

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