ISC016N08NM8ATMA1 vs ISC009N06LM5ATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC016N08NM8ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | β |
| Continuous Drain Current (ID) at Ta | 29 A | 41 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | 348 A |
| Pulsed Drain Current (IDM) at Tc | 268 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 263 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 C to +175 C |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TSON-8-3 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 5 60V N-channel trench MOSFET |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | β |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | [DATA_NEEDED: MSL rating] |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 0.9 mOhm |
| Power Dissipation at Ta (PD) | β | 3 W |
| Power Dissipation at Tc (PD) | β | 214 W |