ISC016N08NM8ATMA1 vs ISC009N06LM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC016N08NM8ATMA1 sa pamamagitan ng Infineon at ISC009N06LM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC009N06LM5ATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
ISC009N06LM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC016N08NM8ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | 41 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | 348 A |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55 C to +175 C |
| Packhaging | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TSON-8-3 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 5 60V N-channel trench MOSFET |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |