ISC016N08NM8SCATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8SCATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC016N08NM8SCATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 8 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current at TA=25Β°C (ID) | 29 A | β |
| Continuous Drain Current at TC=25Β°C (ID) | 269 A | β |
| Power Dissipation at TC=25Β°C (PD) | 263 W | β |
| Package | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | StrongIRFET 2 (Trench MOSFET) |
| Operating Temperature Range | -55C to +175C | -55C to +175C (junction, typical) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 2.35 V |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | [DATA_NEEDED: Qg] |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | β |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | β | Yes (single-pulse) |